SiC Production by Chemical Vapor Deposition Method

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Habibian Nejad, Ali | 2011

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 41671 (06)
University: Sharif University of Technology
Department: Chemical and Petroleum Engineering
Advisor(s): Farhadi, Fathola
Abstract:
Silicon carbide due to its noticeable mechanical and thermal properties, uses in various industries either main substrate or reinforcement. SiC has low specific surface area according to its resistivity against sintering. Recently, a lot of scientists have been worked on SiC in order to fabricating small ones ; subsequently, better sintering will be achieved. Chemical vapor deposition method (CVD) is a method to produce fine SiC with deposition of products by reacting of initial materials from gas environment. In this study normal CVD as proper method and hydrogen, silicon tetrachloride and activated carbon as initial materials are chosen. Using of iron and nickel catalysts in temperature ranging from 1150 °Cto 1300 °C at atmospheric pressure is led to fabrication of SiC nanofiber with 20 – 200 nm in diameter on active carbon substrate.
Keywords:
Activated Carbon ; Nickel Catalyst ; Silicon Carbide ; Chemical Vapor Deposition (CVD) ; Silicon Tetrachloride ; Iron Catalysis

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