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Generation and recombination in two-dimensional bipolar transistors
Gharekhanlou, B ; Sharif University of Technology
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- Type of Document: Article
- DOI: 10.1007/s00339-014-8402-7
- Abstract:
- We study the effects of recombination and generation process on the operation of bipolar junction transistor based on two-dimensional materials, and in particular, graphone. Here, we use Shockley-Read-Hall model to study these process. First, we investigate the current-voltage characteristics of a graphone p-n junction considering generation and recombination process. Then, we calculate the estimated changes in current gain, cutoff frequency, and output characteristics of a graphone bipolar junction transistor designed in a recent study
- Keywords:
- Cutoff frequency ; Semiconductor junctions ; Two dimensional ; Current gains ; Generation process ; Output characteristics ; P-n junction ; Recombination process ; Shockley-Read-Hall models ; Two-dimensional materials ; Bipolar transistors
- Source: Applied Physics A: Materials Science and Processing ; Vol. 115, issue. 3 , 2014 , pp. 737-740 ; ISSN: 00304018
- URL: http://www.sciencedirect.com/science/article/pii/S0030401813009759