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UV photodetection of laterally connected ZnO rods grown on porous silicon substrate

Rajabi, M ; Sharif University of Technology | 2012

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  1. Type of Document: Article
  2. DOI: 10.1016/j.sna.2012.04.003
  3. Publisher: 2012
  4. Abstract:
  5. Here, the UV photodetection of ZnO rods grown on porous silicon substrates are reported. Laterally interconnected ZnO rods have been synthesized by chemical vapor transport and condensation method on porous silicon substrates. As characterized by current-voltage measurements the I-V characteristics have linear behavior, indicating space charge effect. The device exhibits photocurrent response of 0.027 A/W for 325 nm UV light under -5 V bias. The rise and decay time constants under these conditions are 19 and 62 s, respectively
  6. Keywords:
  7. Chemical vapor transport and condensation ; Photocurrent response ; UV photoconductor ; Chemical vapor transport ; Current-voltage measurements ; Decay time constant ; IV characteristics ; Linear behavior ; Photo detection ; Photocurrent response ; Porous silicon substrates ; Space charge effects ; ZnO ; ZnO rod ; Condensation ; Photodetectors ; Porous silicon ; Transport properties ; Vapors ; Zinc oxide
  8. Source: Sensors and Actuators, A: Physical ; Volume 180 , 2012 , Pages 11-14 ; 09244247 (ISSN)
  9. URL: http://www.sciencedirect.com/science/article/pii/S0924424712002282