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Effect of radial structure on the performance of lateral high-power GaAs photoconductive switch

Hemmat, Z ; Sharif University of Technology | 2015

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  1. Type of Document: Article
  2. DOI: 10.1109/EIT.2015.7293380
  3. Publisher: IEEE Computer Society , 2015
  4. Abstract:
  5. In this paper, the effect of radial structure on the performance of a linear-lateral GaAs high power photoconductive semiconductor switch (PCSS) is investigated. For this purpose a three-dimensional device modeling is used to model the optically initiated GaAs switch. In this simulation a p-type device with carbon as shallow acceptor is compensated by deep donor EL2 level as a trap level. The PCSS device is designed in a back-triggered, radially symmetric switch structure which extends the blocking voltage by reducing the peak electric field near the electrodes. Device modeling was performed and the effect of different trap concentrations on dark I-V characteristics has been investigated. In this paper effect of device thickness, different bias voltages and optical power density on transient simulation is reported
  6. Keywords:
  7. Photoconductive semiconductor switch ; Carbon ; Electric fields ; Electric switches ; Gallium arsenide ; Photoconductivity ; Semiconducting gallium ; Semiconductor switches ; back-triggered ; GaAs ; Photoconductive semiconductor switches ; Radial lateral ; Semi-insulating ; Photoconductive switches
  8. Source: IEEE International Conference on Electro Information Technology, 21 May 2015 through 23 May 2015 ; Volume 2015-June , 2015 , Pages 436-439 ; 21540357 (ISSN) ; 9781479988020 (ISBN)
  9. URL: http://ieeexplore.ieee.org/document/7293380