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Bipolar transistor based on graphane

Gharekhanlou, B ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1088/1742-6596/248/1/012061
  3. Abstract:
  4. Graphane is a semiconductor with an energy gap, obtained from hydrogenation of the two-dimensional grapheme sheet. Together with the two-dimensional geometry, unique transport features of graphene, and possibility of doping graphane, p and n regions can be defined so that p-n junctions become feasible with small reverse currents. Our recent analysis has shown that an ideal I-V characteristic for this type of junctions may be expected. Here, we predict the behavior of bipolar juncrion transistors based on graphane. Profiles of carriers and intrinsic parameters of the graphane transistor are calculated and discussed
  5. Keywords:
  6. Intrinsic parameters ; IV characteristics ; P-n junction ; Reverse currents ; Two-dimensional geometry ; Bipolar transistors ; Graphene ; Physics ; Two dimensional ; Semiconductor junctions
  7. Source: Journal of Physics: Conference Series, 5 July 2010 through 10 July 2010 ; Volume 248 , 2010 ; 17426588 (ISSN)
  8. URL: http://iopscience.iop.org/article/10.1088/1742-6596/248/1/012061/meta