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A New SPICE macro-model for the simulation of single electron circuits

Karimian, M. R ; Sharif University of Technology | 2010

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  1. Type of Document: Article
  2. DOI: 10.3938/jkps.56.1202
  3. Publisher: 2010
  4. Abstract:
  5. To get a more accurate model for the simulation of single electron transistors (SETs), we propose a new macro-model that includes an electron tunneling time calculation. In our proposed model, we have modified the previous models and have applied some basic corrections to the formulas. In addition, we have added a switched capacitor circuit, as a quantizer, to calculate the electron tunneling time. We used HSPICE for a high-speed simulation and observed that the simulation results obtained from our model match more closely with that of SIMON 2.0. We also could evaluate the time of electron tunneling through the barrier by using the quantizer. Clearly, our macro-model gives more accurate results than other models when compared with SIMON 2.0 and can be used for calculating the delay time of complicated circuits
  6. Keywords:
  7. HSPICE ; Macro-model ; Quantizer ; SIMON ; Single electron transistor (set) ; Switched capacitor circuit
  8. Source: Journal of the Korean Physical Society ; Volume 56, Issue 4 , 2010 , Pages 1202-1207 ; 03744884 (ISSN)