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Design of a GaN white light-emitting diode through envelope function analysis

Khoshnegar, M ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/JQE.2009.2032556
  3. Abstract:
  4. In this paper, we present an envelope function analysis technique for the design of the emission spectra of a white quantum-well light-emitting diode (QWLED). The nano- metric heterostructure that we are dealing with is a multiple QW, consisting of periods of three single QWs with various well thicknesses. With the aid of 6 × 6 Luttinger Hamiltonian, we employ the combination of two methods, k · p perturbation and the transfer matrix method, to acquire the electron and hole wave functions numerically. The envelope function approximation was considered to obtain these wave functions for a special basis set. While adjacent valence sub-bands have been determined approximately, the conduction bands are approximated as parabolic. The effect of Stokes shift has also been taken into account. The dipole moment matrix elements for interband atomic transitions are evaluated via the correlation between the electron and hole envelope functions, for both orthogonal polarizations, thus simplifying the calculation of the photoluminescence intensity. Spatial variations in the hole/electron wave functions have been examined with the introduction of piezoelectric and spontaneous polarization internal fields. We theoretically establish the possibility of a highly efficient InGaN red emitter, resulting in a uniform luminescence in red, green, and blue emissions from a white light emitting diode by adjusting the material composition, internal field, and well thickness
  5. Keywords:
  6. Envelope function analysis ; Gan ; Optical intensity spectrum ; Atomic transition ; Blue emission ; Emission spectrums ; Envelope function approximations ; Envelope functions ; Heterostructures ; Hole wave functions ; Interband ; Internal field ; K-p method ; Luttinger Hamiltonian ; Material compositions ; Matrix elements ; Optical intensities ; Orthogonal polarizations ; Photoluminescence intensities ; Quantum well ; Red emitter ; Spatial variations ; Special basis ; Spontaneous polarizations ; Stokes shift ; Sub-bands ; Well thickness ; White LED ; White light emitting diodes ; Diodes ; Electron mobility ; Emission spectroscopy ; Fiber optic sensors ; Gallium alloys ; Gallium nitride ; Heterojunctions ; Light ; Light emission ; Light emitting diodes ; Physical optics ; Polarization ; Semiconductor quantum dots ; Semiconductor quantum wells ; Transfer matrix method ; Wave functions ; Orthogonal functions
  7. Source: IEEE Journal of Quantum Electronics ; Volume 46, Issue 2 , 2010 , Pages 228-237 ; 00189197 (ISSN)
  8. URL: http://ieeexplore.ieee.org/document/5357473