Design and Implementation of a Passive Ku band phase Shifter in 0.18µm CMOS Process

Please enable javascript in your browser.

Besharati Rad, Amir | 2016

552 Viewed

Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 48998 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Medi, Ali
Abstract:
In this project, a “Ku” band (16.3GHz-17.3GHz) 6-bit phase shifter for realizing a phase array T/R module is designed, implemented and measured in CMOS 0.18μm technology. Design specifications for this block were: RMS phase error should be less than 2.5 degree in bandwidth, better than 12dB loss and better than 16dBm input 1dB compression point. High-pass/low-pass filter structure is used to implement this phase shifter. In order to decrease phase shift error in process and temperature corners, a new structure for one of bits was introduced. This structure is less sensitive to process and temperature corners and furthermore it conSumes less area in layout, but it has more loss variation relative to conventional structure. ADS electromagnetic analysis tool is used to design this block. Measurement results show satisfactory conformity to simulation results and design specifications are satisfied in measurement level. The final chip includes two RX and one TX path. The designed phase shifter is used in each of them next to the VGA and LNA blocks. The RMS phase error of 64 states of the measured chip is better than 2.5 degree over 15.3GHz to 18.3GHz bandwidth
Keywords:
Phase Shifter Circuit ; Complementary Metal Oxide Semiconductor Technology (CMOS) ; Analog Front End (AFE)Cheap ; Phase Errors ; Ku Band

No TOC