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On Design of Wideband Compact-Size Ka/Q-Band High-Power Amplifiers

Alizadeh, A ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2016.2554578
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2016
  4. Abstract:
  5. This paper presents a methodology for the design of Ka/Q-band monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs). Design techniques are introduced to reduce chip area and to improve bandwidth (BW). These techniques are applied to the design of a 31-39-GHz 5-W HPA implemented on a 0.1-μm AlGaAs-InGaAs pseudomorphic HEMT (pHEMT) technology. With chip dimensions of 3.35 × 3.2 mm2, the HPA achieves 24% average power-added efficiency (PAE) over the frequency band, while maintaining an average 22-dB small-signal gain. A balanced high-power amplifier (BPA) is also presented, which combines the power of two 5-W HPA cells to deliver peak 8.5-W output power (Pout) in the frequency band of 30-38 GHz. The BPA chip area is 3.5 × 6.5 mm2, and 21-dB average small-signal gain is obtained over the frequency band
  6. Keywords:
  7. Ka-band ; Millimeter-wave (mm-wave) applications ; Power amplifiers (PAs) ; Pseudomorphic HEMT (pHEMT) ; Q-band ; Wideband amplifiers ; Aluminum gallium arsenide ; Amplifiers (electronic) ; Broadband amplifiers ; Design ; Frequency bands ; Heterojunction bipolar transistors ; Microwave amplifiers ; Microwave integrated circuits ; Monolithic microwave integrated circuits ; AlGaAs-InGaAs ; Average power ; Chip dimensions ; Design technique ; High power amplifier ; Monolithic microwave integrated circuits (MMIC) ; Pseudomorphic HEMT ; Small signal gain ; Power amplifiers
  8. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 64, Issue 6 , 2016 , Pages 1831-1842 ; 00189480 (ISSN)
  9. URL: http://ieeexplore.ieee.org/document/7463076