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Spin dependent recombination in magnetic semiconductor

Tashpour, H ; Sharif University of Technology | 2009

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  1. Type of Document: Article
  2. DOI: 10.1063/1.3155426
  3. Publisher: 2009
  4. Abstract:
  5. The effect of spin dependent recombination on the transport properties of magnetic semiconductors is investigated theoretically. In particular, for p -type direct band gap semiconductors, a theory based on classic Shockley equations is formulated. In this theory the density of spin and charge has been evaluated analytically by solving the diffusive transport equation and it is shown that the difference between recombination rates affect the lifetimes of spin and charge significantly. It is also demonstrated that a considerable spin charge coupling occur. Application of this theory to pure band to band recombination process is discussed. © 2009 American Institute of Physics
  6. Keywords:
  7. Band-to-band recombination ; Diffusive transport ; Direct band gap semiconductors ; P-type ; Recombination rate ; Shockley equation ; Spin-charge couplings ; Spin-dependent recombination ; Magnetic semiconductors ; Transport properties ; Spin dynamics
  8. Source: Applied Physics Letters ; Volume 94, Issue 24 , 2009 ; 00036951 (ISSN)
  9. URL: https://aip.scitation.org/doi/10.1063/1.3155426