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Distributed class-J power amplifiers

Alizadeh, A ; Sharif University of Technology | 2017

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2016.2615932
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2017
  4. Abstract:
  5. This paper presents the design and implementation of a distributed class-J power amplifier (DJPA) in a 0.25-μm AlGaAs-InGaAs pHEMT technology. Class-J mode of operation is introduced in design of distributed power amplifiers (DPAs) to achieve high power added efficiencies (PAEs) over wide frequency ranges. Extensive load-pull (LP) and source-pull (SP) simulations are performed to show that class-J PAs are less sensitive to proper termination of higher order harmonics, and high PAE and output power can be obtained even if the second, third, fourth, and fifth harmonics comprise a real impedance. This is essential in DPAs as the higher order harmonics of the frequencies at lower side of the band may fall in the desired bandwidth. Based on LP and SP observations, a proof-of-concept 1.5-10-GHz monolithic microwave integrated circuit DJPA is designed and fabricated. Chip dimensions are 2.15 × 2.15 mm2, and 29-30.7-dBm output power with 33-44% PAE is achieved over the frequency range. The large-signal power gain is greater than 10 dB while the PA maintains an average small-signal gain of 13 dB over the bandwidth. © 2016 IEEE
  6. Keywords:
  7. Distributed power amplifiers (DPAs) ; Harmonically tuned power amplifiers ; Monolithic microwave integrated circuit ; Aluminum gallium arsenide ; Amplifiers (electronic) ; Bandwidth ; Electric impedance ; Harmonic analysis ; Heterojunction bipolar transistors ; Microwave amplifiers ; Microwave integrated circuits ; Monolithic integrated circuits ; Monolithic microwave integrated circuits ; Class J ; Design and implementations ; Distributed power amplifier ; Higher order harmonics ; Mode of operations ; pHEMT ; Small signal gain ; Wide frequency range ; Power amplifiers
  8. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 65, Issue 2 , 2017 , Pages 513-521 ; 00189480 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/7676317