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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 52393 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Sharifbakhtiar, Mehrdad
- Abstract:
- Today’s radio transmitters must be able to send information in several standards. One problem involved in these wide band electronic systems lies in its end part, ie power amplifier. To have a broad band width either switching must be made among several power amplifiers with narrow band width (tuned) or the transistor part of power amplifier must be the same and single and selection be made only among matching networks. In this thesis, a power amplifier with broad band width without requiring a matching network has been designed and laid out. Also considering the low breakdown voltage of the gate oxide of the today’s standard CMOS transistors, it is very difficult to get a high output power without using a transformer or a matching network. A suggested architecture for this purpose is the stacked power amplifier, but unfortunately the reported stacked power amplifiers have a narrow band width at the present. The working frequency of the designed power amplifier is from very low frequencies up to more than 6GHz; its power output with 180nm standard CMOS process along with proper linearity (harmonic rejection better than 40dB) is more than 20dBm and the efficiency of the circuit is more than 12%. In addition, this power amplifier is able to give a peak output power more than 23dBm with an efficiency greater than 24% and a harmonic rejection better than 30dB. Then the class A stacked power amplifier (floating gate) converted to a radio frequency power digital to analog converter. The application of this circuit is in multi standard transmitters and also in designing fast links for data transferring
- Keywords:
- Power Amplifier ; High Voltage Switching ; Wideband ; Efficiency ; Linearity ; Low Breakdown Voltage
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