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FDTD analysis of distributed amplifiers based on the fully distributed model

Mirzavand, R ; Sharif University of Technology | 2007

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  1. Type of Document: Article
  2. DOI: 10.1109/APACE.2007.4603907
  3. Publisher: 2007
  4. Abstract:
  5. In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line. © 2007 IEEE
  6. Keywords:
  7. Broadband amplifiers ; Electromagnetism ; Finite difference time domain method ; Magnetism ; MESFET devices ; Three-dimensional ; Time domain analysis ; Wave energy conversion ; Asia-Pacific ; Distributed amplifier ; Distributed amplifiers ; Distributed model ; Distributed modelling ; Electromagnetics ; FDTD analysis ; FDTD simulations ; Finite difference time domain (FDTD) ; Frequency ranging ; Lumped modeling ; MESFET ; Quasi static approach ; S matrix ; Scattering parameter ; Scattering parameters ; Time domain OCT ; Time domain responses ; Transmission line ; Wave approach ; Amplifiers (electronic)
  8. Source: 2007 Asia-Pacific Conference on Applied Electromagnetics, APACE2007, Melaka, 4 December 2007 through 6 December 2007 ; 2007 ; 1424414350 (ISBN); 9781424414352 (ISBN)
  9. URL: https://ieeexplore.ieee.org/document/4603907