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Co surface modification by bias sputtering in Cu/Co(Vb)/NiO/ Si(100) magnetic multilayer structures

Moshfegh, A. Z ; Sharif University of Technology | 2004

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  1. Type of Document: Article
  2. DOI: 10.1002/pssc.200304433
  3. Publisher: 2004
  4. Abstract:
  5. To investigate the Ta/Co/Cu/Co/NiO/Si(100) spin valve structure, fabrication and characterization of the Cu/Co/NiO/Si(100) system was studied for further understanding the structure. The system was grown by employing combinative DC sputtering-evaporation technique. Nickel oxide with a thickness of about 30 nm was deposited on Si(100) substrate using thermal evaporation technique.The cobalt film, then, with a thickness of about 3 nm was grown by DC sputtering under various applied negative bias voltages ranging from 0 to - 80 V. The optimum bias voltage (Vb = -60 V) for the growth of Co layer was determined by atomic force microscopy (AFM), four-point probe sheet measurement (Rs) and scanning electron microscopy (SEM). Following the Co deposition at the optimum condition, the Cu layer with a thickness of about 2 nm was deposited on the Co(Vb)/NiO/Si(100) structure by using DC magnetron sputtering technique. The Cu/Co(Vb)/NiO/Si(100) structure was examined by AFM and Rs measurements. Our data analysis indicates that Cu possess a proper surface for the growth of next Co layer in the Co/Cu/Co active GMR region. © 2004 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim
  6. Keywords:
  7. Atomic force microscopy ; Surface treatment ; Sputtering ; Scanning electron microscopy ; Giant magnetoresistance ; Evaporation ; Deposition ; Data reduction
  8. Source: Physica Status Solidi C: Conferences ; Volume 1, Issue 7 , 2004 , Pages 1744-1747 ; 16101634 (ISSN)
  9. URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200304433