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Dynamics of interface traps in bonded silicon wafers

Khorasani, S ; Sharif University of Technology | 2001

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  1. Type of Document: Article
  2. DOI: 10.1117/12.444987
  3. Publisher: 2001
  4. Abstract:
  5. In this article, a time-domain non-linear model is proposed for quantum dynamics of interface traps. This model includes the effects of thermoionic emission, combined with the drift and tunneling currents. The model is simplified for the case of interface traps of the directly bonded Silicon wafers, and linearized. Therefore, an equivalent electrical circuit is obtained being composed of two resistive and capacitive branches. The theory predicts a close spacing between the corresponding zero and pole in the frequency response of the system, being justified by experiment on directly bonded n-type Silicon wafers. The low frequency response to a square-wave is quite in agreement with the experiment. This method enables one to precisely measure the filling up time-constant of the interface traps through the falling electrons from the conduction band, by measuring the frequency response of the interface
  6. Keywords:
  7. Equivalent circuit ; Frequency response ; Interface states ; Interface traps ; Quantum theory ; Thermoionic emission ; Wafer bonding
  8. Source: Proceedings of SPIE - The International Society for Optical Engineering ; Volume 4580 , 2001 , Pages 391-398 ; 0277786X (ISSN)
  9. URL: https://iopscience.iop.org/article/10.1088/0268-1242/17/5/303/pdf