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Modeling of dynamic trap density increase for aging simulation of any MOSFET circuits

Miura Mattausch, M ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/ESSDERC.2017.8066624
  3. Abstract:
  4. A compact aging model for circuit simulation has been developed by considering all possible trapped carriers within MOSFETs. The hot carrier effect and the N(P)BTI effect are modeled by integrating the substrate current as well as the oxide field change due to the trapped carriers. Additionally, the carriers trapped within the highly resistive drift region are included for high-voltage (HV)-MOSFET modeling. The aging model considers the dynamic trap-density increase as a function of circuit-operation time with dynamically varying stress conditions for each individual MOSFET. A self-consistent solution is obtained by iteratively solving the Poisson equation including the trap density. The model is verified to be applicable for any type of MOSFETs covering advanced technologies as well as HV-MOSFETs. © 2017 IEEE
  5. Keywords:
  6. Aging simulation ; Dynamic change ; Circuit simulation ; Poisson equation ; Solid state devices ; Timing circuits ; Advanced technology ; Carrier traps ; Circuit operation ; Dynamic changes ; Hot carrier effect ; Modeling of dynamics ; Self-consistent solution ; Substrate current ; MOSFET devices
  7. Source: European Solid-State Device Research Conference, 11 September 2017 through 14 September 2017 ; 2017 , Pages 192-195 ; 19308876 (ISSN) ; 9781509059782 (ISBN)
  8. URL: https://ieeexplore.ieee.org/document/8066624