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    Modeling of Vertical Tunneling Transistor based on Gr-hBN-MoSe2 Heterostructure

    , M.Sc. Thesis Sharif University of Technology Ahmadi Golsaraki, Amir Hossein (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, the transmission characteristics of a vertical tunneling transistors based on graphene-hBN-MoSe2 heterostructure is studied. We first obtain the tight-binding parameters required for Hamiltonian matrix and bandstructure calculations using density functional theory results. Once we have the tight-binding parameters, Hamiltonian and coupling matrices are calculated both of size 326×326. We then proceed to calulate the density of stated for source and drain contacts using the aforementioned matrices and nonequilibrium Green’s function(NEGF) formalism. We can then calculate the quantum capacitances of source and drain and acquire source/drain potentials using a capacitive circuit... 

    Hardware Design for Cold Plasma Characterization Chamber

    , M.Sc. Thesis Sharif University of Technology Aghapour, Reza (Author) ; Rashidian, Bijan (Supervisor) ; Faez, Rahim (Supervisor)
    Abstract
    Cold plasma due to its special properties has many applications in the microelectronics industry. At the beginning of this study, a few examples of widely used plasmas and the requirements for driving their power sources have been investigated. To generate and characterize plasma, various topologies of DC power supply construction, including high-voltage low-current power supplies called multipliers and low-voltage high-voltage power supplies called converters, have been reviewed and compared.Circuit for pulse generating for plasma application has also been proposed and investigated. In the simulation section, after introducing, reviewing, and compareing the common types of simulators, the... 

    Investigating Excitation and Geometrical Effects on the Behavior of Cold Plasma

    , M.Sc. Thesis Sharif University of Technology Haghkish, Nima (Author) ; Rashidian, Bijan (Supervisor) ; Faez, Rahim (Supervisor)
    Abstract
    Cold plasma has many applications in micro electronics industry. In this study, several examples of widely used plasmas systems have been investigated. First, the theory and physics of each type of plasma has been studied. Then the applications of each type have been discussed. Finally, the accuracy of the statements has been investigated using COMSOL multi physics software. In 1&2 D simulations the effects of all macroscopic parameters on plasma properties and its behavior have been investigated. In the design of plasma excitation source, plasma impedance is a very important parameter for maximum power transfer. Plasma impedance has been calculated with COMSOL software. Different modes of... 

    Analysis and Simulation of a Graphene Based Plasmon Laser

    , Ph.D. Dissertation Sharif University of Technology Behjati Ardakani, Sadreddin (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In the present thesis, the SPASER is investigated, from theory to structure design. SPASER is a counterpart of laser in 3D subwavelength dimentions. In other words, SPASER does not suffer from the diffraction limit of photons which is a drawback in laser technology. It potentially can generate intense coherent dark and bright surface plasmon modes. The small size of SPASER gives it the capability of being integrated with electronic chips. So, the electronic technology will become faster if the SPASER is realized. In this thesis, we intend to use the unique plasmonic properties of graphene in our designs. Plasmons on graphene platforms have longer propagation length and larger lifetime in... 

    Analysis and Design of a Graphene-based Plasmonic Modulator

    , Ph.D. Dissertation Sharif University of Technology Ghahri, Mohammad Reza (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this study, we simulated and analyzed a plasmonic waveguide modulator based on single layer graphene. It includes a graphene sheet, which sandwiches between two layers of silicon dioxide. Then, some gates are arranged on either side of the waveguide on a periodic structure. When an electric field is applied perpendicular to the waveguide plate, the Fermi level of graphene under the gates, changes. Detailed analysis is performed by the method of lines based on Maxwell's equations along the propagation direction of the waveguide. Computation of the multi-gate device starts by examining the effect of Fermi level. Transmission coefficient of the magnetic-field norms of the modulator is... 

    Design of 8 kV ESD Protection Circuit Compatibe with HBM in BCD Technology

    , M.Sc. Thesis Sharif University of Technology Jarollahi, Bahar (Author) ; Faez, Rahim (Supervisor) ; Medi, Ali (Supervisor)
    Abstract
    Electro Static discharge (ESD) in ICs can damage them. To prevent ICs from being damaged by ESD, protection circuits must be used. These protection circuits can be either designed on chip or on PCBs, to be more protective, both can be used. In this thesis, 8 kV ESD protection circuits according to human body model (HBM) in high voltage 0.18 um CMOS technology has been designed. In this thesis, in addition to study of electro static discharge phenomenon and its protection circuits, we have designed high voltage pads which are protected against 8 kV electro static discharge according to human body model. Finally these pads have been used in automotive ICs. In this thesis, firs we have... 

    Simulation of Organic/Inorganic Quantum Dot Light Emitting Diodes

    , M.Sc. Thesis Sharif University of Technology Alam, Mohammad Hossein (Author) ; Faez, Rahim (Supervisor)
    Abstract
    The light emitting diodes is composed of an electron transport layer and hole transport layer. The electrons and holes go to the middle region called active region through these transmit regions, and they emit light from themselves by recombination in this area. In our structure, the active region consists of quantum dots. The emitted light characteristics depend on these dots to great extent. In this thesis, we first describe the processes in this type of device, and then we will review the well-known structures that have been reported so far. In chapter 4 discusses the important characteristics of the active region, including the size of the quantum dots and the wetting layer, and we... 

    Design and Simulation of Spin Transport in Graphene Based Nanostructures

    , Ph.D. Dissertation Sharif University of Technology Chaghazardi, Zahra (Author) ; Faez, Rahim (Supervisor) ; Pourfath, Mahdi (Co-Advisor)
    Abstract
    Graphene -a two-dimensional monolayer of graphite- was realized for the first time in 2004.Owing to its physical extra ordinary properties, graphene has attracted growing interest in research from fundamental physics to electronics, spintronics, and thermoelectrics. Importantly, it is an attractive material for electronics and spintronics due to its specific physical properties such as high electron mobility and gate tunable carrier concentration. Furthermore,achievement of room-temperature spin transport with relatively long spin relaxation time makes graphene nanoribbons the best candidate for spintronics. Based on the theoretical predictions, the weak spin-orbit interaction in graphene... 

    Simulation of Organic Solar Cells

    , M.Sc. Thesis Sharif University of Technology Bahrami, Ali (Author) ; Faez، Rahim (Supervisor)
    Abstract
    Solar cells are one of the most promising clean and readily available energy sources. Organic solar cells as a new generation of solar cells, have attracted strong attention in recent years, due to the advantages of flexibility, thinness, and simple manufacturing process. This work focuses on the electrical processes in organic solar cells and approaches for enhancing the efficiency of solar cell by employing two-dimensional drift-diffusion model. At the first step. We investigate the role of different parameters such as mobility (considering different recombination mechanisms), active layer thickness, light intensity, barrier injections and energetic disorder on the performance of single... 

    Design and Simulation of Panchromatic Organic Photodetector

    , M.Sc. Thesis Sharif University of Technology Meraji, Omid (Author) ; Faez, Rahim (Supervisor)
    Abstract
    Organic photodetectrors(OPD) are new generation of photodetectors that use of organic materials to convert optical signal to electrical current. Organic photodetectors in recent decade have witnessed significant improvements and many recent research allocated to this photodetectors. This OPD’s have important application so that the inorganic photodetectors have some problems in that application , for example: wide area imagination , biomedical sensors , flexible application and . . . .This work focus on the design and simulation of a panchromatic photodetector that use of new material and have high bandwidth and low dark current. One of application of this OPD is to use in optical... 

    Simulation and Comparative Study of Tunneling FETs Based on Graphene Nanoribbon and Phosphorene Monolayer

    , M.Sc. Thesis Sharif University of Technology Almasi, Hossein (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, we simulate and investigate two transistors which both have tunneling FET (TFET) structure but the channel in the first one is graphene nanoribbon (GNR) and in the second one is a monolayer of phosphorene (PML). To describe the quantum systems of the transistors, we use the tight binding method and its models for the channel materials. In case of the PML TFET, based on the behavior of the phosphorene nanoribbon in different widths, we obtain a proper amount for the width to model the infinite-width channel. To extract the channel quantum transport, the Schrodinger-Poisson equations are self-consistently solved. In the next step, we simulate the GNR TFET and present the... 

    Simulation And Analysis of Terahertz Laser Based on Graphene

    , M.Sc. Thesis Sharif University of Technology Abdolzadeh, Parvin (Author) ; Faez, Rahim (Supervisor)
    Abstract
    Graphene, a monolayer carbon-atomic honeycomb lattice crystal, has attracted attention due to its peculiar carrier transport properties owing to the gapless energy spectrum. Due to lack of applicable light source in terahertz (THz) band, further researches to finding materials that are suitable for semiconductor lasers in this band to be continued. In this thesis, the population inversion possibility that is the first provision of laser operation, was analyzed in graphene optical pumping situation. The analysis was done by numerical solving of carrier concentration and energy density relations.As a result of this analysis population inversion is obtained when the stimulation square pulse has... 

    Simulation and Analysis Graphene Based Bio-chemical Sensor Using Localized Surface Plasmon Resonance

    , M.Sc. Thesis Sharif University of Technology Tareh, Batool (Author) ; Faez, Rahim (Supervisor)
    Abstract
    One of the different sensing techniques for biosensors is based on surface plasmon resonance which provides high reliability and efficiency. In this project working operating principles of biosensors based on surface plasmon resonance will be examined. For investigation of sensing meachanism we assume that there an array consisting of alternating graphen ribbons which by applying light leads to an effective magnetic field coupling to the localized surface plasmon. The numerical calculations are based on the exact solution of Maxwell's equation using Fuorier Model Method and Matlab coding. In these calculations, the coefficients of transmission, reflection and absorption of light versus... 

    Modeling and Simulation of a High Power Photoconductive Semiconductor Switch (PCSS)

    , M.Sc. Thesis Sharif University of Technology Hemmat, Zahra (Author) ; Faez, Rahim (Supervisor)
    Abstract
    There are a wide variety of light-triggered switches. Photoconductive semiconductor switches (PCSSs) have been investigated intensively for many applications owing to their unique advantages over other switches. The advantages of PCSSs make them a perfect choice for many important applications where high switching accuracy and high-power capability are required. Photoconductive switches are fabricated from a variety of semiconductors, including silicon carbide (SiC), gallium arsenide (GaAs) and gallium nitride (GaN). In Photoconductive semiconductor switches (PCSSs) the switching mechanism is initiated by optical illumination and laser source controls the flow of current. In the off or... 

    Quantum Well Solar Cell

    , M.Sc. Thesis Sharif University of Technology ZareBidaki, Homa (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, the goal is to improve the efficiency of quantum and solar cell. The effect of quantum wells was simulated by Silvaco. Initially, the quantum well has been adjusted to a cell junction GaAs. Then, using quantum wells in cell junction towing and three, improving short-circuit, the returns will be 53.79% and 54.33%. This efficiency is about 10% more than the triple-junction solar cells. To improve the efficiency effects of layer thicknesses, parameters, and the number of quantum wells were studied.Tandem cell is 〖In〗_0.51 〖Ga〗_0.49 P/GaAs, and triple is 〖In〗_0.51 〖Ga〗_0.49 P/GaAs/〖In〗_0.28 〖Ga〗_0.72 As. By adjusting the quantum well and sandwiching the well layers staggered by... 

    Simulation of Graphene Nanoribbon based Photodetector

    , M.Sc. Thesis Sharif University of Technology Faramarzi, Vahid (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this work, we have simulated graphene nanoribbon based photodetector and impact of changing the width, and Boron-Nitride doping and Stone-Wales defects on the optical properties of GNR has study. The energy band structure of GNR with nearest-neighbor approximation in a tight binding model calculated. To correspond with experiment and accuracy, we need to consider the impact of third nearest neighbors and edge bond relaxation. By Using the band structure, we calculated joint density of state and optical matrix elements and obtain inter band selection rule for A-GNR and Z-GNR. Then, using the Fermi’s golden rule, we investigate optical properties of GNR such as optical conductivity and... 

    Simulation and Analysis of Bilayer Graphene FET with Defect

    , M.Sc. Thesis Sharif University of Technology Ghalehkohneh, Ali (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, a field-effect transistor using armchair bilayer grapheme nanoribbon as channel material in simulated. In first, electronic property of bilayer graphene and bilayer graphene nanoribbons using tight binding are studied. Transport properties of transistor, sush as transsmition and density of carriers, are studied by self-consistently solving poisson equation and Non-Equilibrium Green’s Function. Finally, I-V characteristics of the transistor can be obtained using the Landauer formula.
    Also, effect of Stone-Wales defect on bandstructure and transmission of armchair bilayer grapheme nanoribbon is investigated. This defect increases energy gap and broadens egergy bands in... 

    Design of Graphene Spintronic Devices

    , M.Sc. Thesis Sharif University of Technology Barami, Soode (Author) ; Faez, Rahim (Supervisor)
    Abstract
    Magnetization have an important role in spintronic devices based on graphene. In this study the effect of stone-wales and vacancy defect on electrical and magnetic properties of zigzag and armchair graphene nanoribbons were investigated. Calculations are performed using tight-binding and hubard model combining with Green's function techniques. When the balance between A and B sub-lattices gets disturbed, magnetization will be appeared. In stone-wales defect we have local magnetization because of changing the position of sub-lattices and the total magnetization is zero. In addition the stone-wales defect can change and modify the band structures and band gaps. Vacancy of carbon atom in... 

    Thermoelectric Properties of Graphene-Based Material

    , Ph.D. Dissertation Sharif University of Technology Karami Taheri, Hossein (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, the thermal and thermoelectric properties of graphene-based nanostructures are numerically investigated. The transport parameters, including Seebeck coefficient, electrical conductance, and thermal conductance are obtained as well as the thermoelectric figure of merit. The Hamiltonian matrix is set up using a third nearestneighbor atomistic tight-binding approximation and the dynamical matrix using a 4th nearest neighbor force constant approximation. Both ballistic and diffusive regimes are considered in this work. For transport investigation, the Landauer formula and the nonequilibrium Green’s function techniques are used. The role of temperature, geometrical parameters,... 

    A Simulation Study of Graphene Nanoribbon Field Effect Transistor

    , M.Sc. Thesis Sharif University of Technology Samadi, Mohsen (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, a field effect transistor (FET) using armchair graphene nanoribbon as the channel is simulated, and the effects of changing nanoribbon width and length, as well as adding defects, are also studied. To obtain the Hamiltonian matrix and the energy band structure of graphene nanoribbon, tight binding method is used in which the first and third neighbor approximation is considered. Also, to maximize accuracy, we also considered the edge bond reconstruction. To obtain the transport characteristics of the transistor, such as the transmission coefficient and the density of states (DOS), Poisson and Schrodinger equations are solved self-consistently. We used the nonequilibrium...