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    Simulation and Analysis of Bilayer Graphene FET with Defect

    , M.Sc. Thesis Sharif University of Technology Ghalehkohneh, Ali (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, a field-effect transistor using armchair bilayer grapheme nanoribbon as channel material in simulated. In first, electronic property of bilayer graphene and bilayer graphene nanoribbons using tight binding are studied. Transport properties of transistor, sush as transsmition and density of carriers, are studied by self-consistently solving poisson equation and Non-Equilibrium Green’s Function. Finally, I-V characteristics of the transistor can be obtained using the Landauer formula.
    Also, effect of Stone-Wales defect on bandstructure and transmission of armchair bilayer grapheme nanoribbon is investigated. This defect increases energy gap and broadens egergy bands in... 

    Design of Graphene Spintronic Devices

    , M.Sc. Thesis Sharif University of Technology Barami, Soode (Author) ; Faez, Rahim (Supervisor)
    Abstract
    Magnetization have an important role in spintronic devices based on graphene. In this study the effect of stone-wales and vacancy defect on electrical and magnetic properties of zigzag and armchair graphene nanoribbons were investigated. Calculations are performed using tight-binding and hubard model combining with Green's function techniques. When the balance between A and B sub-lattices gets disturbed, magnetization will be appeared. In stone-wales defect we have local magnetization because of changing the position of sub-lattices and the total magnetization is zero. In addition the stone-wales defect can change and modify the band structures and band gaps. Vacancy of carbon atom in... 

    Electrical and Thermal Properties of Thin Films of Perovskites

    , M.Sc. Thesis Sharif University of Technology Nouri, Roya (Author) ; Kargarian, Mehdi (Supervisor)
    Abstract
    In this thesis, we consider a simple layered structure grown along [001] direction. Based on the previous works we show that the energy spectrum contains linear Dirac spectrum of type II tilted in some direction. We also investigate the anomalous transport phenomena in the bilayer structures grown along [111] direction of a class of perovskites. The crystal field splits the d orbitals into two classes dubbed as eg and t2g described by different Hamiltonians within each manifold. An applied magnetic field breaks the time reversal symmetry and we show that the tight-binding bands acquire non-zero Chern numbers underlying the existence of non-trivial band topology in these structures. Again... 

    Modeling of Vertical Tunneling Transistor based on Gr-hBN-MoSe2 Heterostructure

    , M.Sc. Thesis Sharif University of Technology Ahmadi Golsaraki, Amir Hossein (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, the transmission characteristics of a vertical tunneling transistors based on graphene-hBN-MoSe2 heterostructure is studied. We first obtain the tight-binding parameters required for Hamiltonian matrix and bandstructure calculations using density functional theory results. Once we have the tight-binding parameters, Hamiltonian and coupling matrices are calculated both of size 326×326. We then proceed to calulate the density of stated for source and drain contacts using the aforementioned matrices and nonequilibrium Green’s function(NEGF) formalism. We can then calculate the quantum capacitances of source and drain and acquire source/drain potentials using a capacitive circuit... 

    A Simulation Study of Graphene Nanoribbon Field Effect Transistor

    , M.Sc. Thesis Sharif University of Technology Samadi, Mohsen (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this thesis, a field effect transistor (FET) using armchair graphene nanoribbon as the channel is simulated, and the effects of changing nanoribbon width and length, as well as adding defects, are also studied. To obtain the Hamiltonian matrix and the energy band structure of graphene nanoribbon, tight binding method is used in which the first and third neighbor approximation is considered. Also, to maximize accuracy, we also considered the edge bond reconstruction. To obtain the transport characteristics of the transistor, such as the transmission coefficient and the density of states (DOS), Poisson and Schrodinger equations are solved self-consistently. We used the nonequilibrium... 

    Simulation of Graphene Nanoribbon based Photodetector

    , M.Sc. Thesis Sharif University of Technology Faramarzi, Vahid (Author) ; Faez, Rahim (Supervisor)
    Abstract
    In this work, we have simulated graphene nanoribbon based photodetector and impact of changing the width, and Boron-Nitride doping and Stone-Wales defects on the optical properties of GNR has study. The energy band structure of GNR with nearest-neighbor approximation in a tight binding model calculated. To correspond with experiment and accuracy, we need to consider the impact of third nearest neighbors and edge bond relaxation. By Using the band structure, we calculated joint density of state and optical matrix elements and obtain inter band selection rule for A-GNR and Z-GNR. Then, using the Fermi’s golden rule, we investigate optical properties of GNR such as optical conductivity and... 

    analytical calculation of energy levels of mono- and bilayer graphene quantum dots used as light absorber in solar cells

    , Article Applied Physics A: Materials Science and Processing ; Volume 122, Issue 1 , 2016 , Pages 1-8 ; 09478396 (ISSN) Tamandani, S ; Darvish, G ; Faez, R ; Sharif University of Technology
    Springer Verlag  2016
    Abstract
    In this paper by solving Dirac equation, we present an analytical solution to calculate energy levels and wave functions of mono- and bilayer graphene quantum dots. By supposing circular quantum dots, we solve Dirac equation and obtain energy levels and band gap with relations in a new closed and practical form. The energy levels are correlated with a radial quantum number and radius of quantum dots. In addition to monolayer quantum dots, AA- and AB-stacked bilayer quantum dots are investigated and their energy levels and band gap are calculated as well. Also, we analyze the influence of the quantum dots size on their energy spectrum. It can be observed that the band gap decreases as quantum... 

    Near-room-temperature spin caloritronics in a magnetized and defective zigzag MoS2 nanoribbon

    , Article Journal of Computational Electronics ; Volume 19, Issue 1 , 2020 , Pages 137-146 Zakerian, F ; Fathipour, M ; Faez, R ; Darvish, G ; Sharif University of Technology
    Springer  2020
    Abstract
    Using a tight-binding approach and first-principles calculations combined with the nonequilibrium Green’s function method, the thermal spin transport in a zigzag molybdenum disulfide (MoS 2) nanoribbon in the proximity of a ferromagnetic insulator that induces a local exchange magnetic field in the center of the nanoribbon is investigated. It is found that a pure spin current and perfect spin Seebeck effect with zero charge current can be generated by applying a thermal gradient and local exchange magnetic field without a bias voltage near room temperature. Furthermore, it is shown that this nanoscale device can act as a spin Seebeck diode for the control of thermal and spin information in... 

    Effects of ligands on (de-)enhancement of plasmonic excitations of silver, gold and bimetallic nanoclusters: TD-DFT+TB calculations

    , Article Physical Chemistry Chemical Physics ; Volume 23, Issue 33 , 2021 , Pages 17929-17938 ; 14639076 (ISSN) Asadi Aghbolaghi, N ; Pototschnig, J ; Jamshidi, Z ; Visscher, L ; Sharif University of Technology
    Royal Society of Chemistry  2021
    Abstract
    Metal nanoclusters can be synthesized in various sizes and shapes and are typically protected with ligands to stabilize them. These ligands can also be used to tune the plasmonic properties of the clusters as the absorption spectrum of a protected cluster can be significantly altered compared to the bare cluster. In this paper, we computationally investigate the influence of thiolate ligands on the plasmonic intensity for silver, gold and alloy clusters. Using time-dependent density functional theory with tight-binding approximations, TD-DFT+TB, we show that this level of theory can reproduce the broad experimental spectra of Au144(SR)60 and Ag53Au91(SR)60 (R = CH3) compounds with... 

    Twisted-shape selection of self-assembled Si 〈100〉 nanobelts and nanowires

    , Article Journal of Physics D: Applied Physics ; Volume 54, Issue 25 , 2021 ; 00223727 (ISSN) Danesh, V ; Nejat Pishkenari, H ; Zohoor, H ; Sharif University of Technology
    IOP Publishing Ltd  2021
    Abstract
    This letter discusses the surface-reconstruction-induced self-twisting behavior of Si100 nanobelts and nanowires (NWs) with rectangular cross section. Giving a thorough physical interpretation, we explain the reason behind this phenomenon and present a continuum-based model. It is revealed that these structures can self-assemble into both right- and left-handed helicoids depending on their crystal arrangements. More specifically, for NWs with the same number of layers in each of their cross sections directions, two distinct values of torsion angle are possible for each of right- and left-handed twisted morphologies. In conclusion, four modes of torsion can be observed in Si100 NWs.... 

    Manipulation of structural, electronic and transport properties of hydrogen-passivated graphene atomic sheet through vacancy defects: First-principles numerical simulations based on density-functional-theory along with tight-binding approximation

    , Article Materials Research Express ; Volume 6, Issue 8 , 2019 ; 20531591 (ISSN) Sattar, A ; Irfan, M ; Iqbal, A ; Shahid, F. A ; Junaid Amjad, R ; Usman, A ; Mahmood, H ; Latif, H ; Imran, M ; Akhtar Ehsan, S ; Akhtar, M. N ; Akbar, N ; Sharif University of Technology
    Institute of Physics Publishing  2019
    Abstract
    Using the first-principles procedure of density-functional-theory within tight-binding approximation and nonequilibrium Green's function formalism, this paper reports on the impact of vacancy defects on the structural, electronic and transport properties of hydrogen-passivated graphene atomic sheet. After the introduction of vacancy defects in graphene atomic sheet passivated with hydrogen atoms, apart from increase in band gap, a suppression is noted in the intensity of transmission channels and density of states arising from the long array deformations of the graphene sheet and a corresponding shift of the Fermi level. This in turn decreases the conductance of the defected graphene atomic... 

    Spin FET based on graphene nanoribbon in the presence of surface roughness

    , Article IEEE Transactions on Electron Devices ; Volume 64, Issue 8 , 2017 , Pages 3437-3442 ; 00189383 (ISSN) Chaghazardi, Z ; Faez, R ; Babaee Touski, S ; Pourfath, M ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    In this paper, the characteristics of an armchair graphene nanoribbon spin FET (SFET) are investigated in the presence and absence of surface roughness, by employing a multiorbital tight-binding method along with the nonequilibrium Green's function approach. It is found that the bandgap monotonically decreases with increasing the vertical electric field, since Stark effect enhances spin-flip rate under a high vertical electric field. Furthermore, spin transport in the presence of a random potential, which is induced by the concurrent effect of the applied vertical electric field and surface roughness, is carefully analyzed. This random potential strongly scatters carriers and reduces spin... 

    Modeling of a vertical tunneling transistor based on graphene-mos2 heterostructure

    , Article IEEE Transactions on Electron Devices ; Volume 64, Issue 8 , 2017 , Pages 3459-3465 ; 00189383 (ISSN) Horri, A ; Faez, R ; Pourfath, M ; Darvish, G ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2017
    Abstract
    In this paper, for the first time, we present a computational study on the electrical behavior of the field-effect tunneling transistor based on vertical graphene-MoS2 heterostructure and vertical graphene nanoribbon-MoS2 heterostructure. Our simulation is based on nonequilibrium Green's function formalism along with an atomistic tight-binding (TB) model. The TB parameters are obtained by fitting the bandstructure to first-principle results. By using this model, electrical characteristics of device, such as I ON/I OFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. We show that the combination of tunneling and thermionic transport allows modulation of current by... 

    Local impact of Stone–Wales defect on a single layer GNRFET

    , Article Physics Letters, Section A: General, Atomic and Solid State Physics ; Volume 384, Issue 7 , 2020 Shamloo, H ; Nazari, A ; Faez, R ; Shahhoseini, A ; Sharif University of Technology
    Elsevier B.V  2020
    Abstract
    In this work, a new structure of single layer armchair graphene nanoribbon field effect transistor with the Stone–Wales (SW) defect (SWGNRFET) is studied. The simulations are solved with Poisson–Schrödinger equation self-consistently by using Non-Equilibrium Green Function (NEGF) and in the real space approach. The energy band structure is obtained by approximation tight-binding method. The results show that displacement of a defect in the width of the channel of the new structure is led to 50% increase in ION/IOFF ratio only by rotating of a C–C (Carbon–Carbon) bond with similar behavior. But, a remarkable increase of 300% in ION/IOFF ratio is obtained by a “dual center” defect. The results... 

    An exact analysis for the hoop elasticity and pressure-induced twist of CNT-nanovessels and CNT-nanopipes

    , Article Mechanics of Materials ; Volume 82 , 2015 , Pages 47-62A ; 01676636 (ISSN) Delfani, M. R ; Shodja, H. M ; Sharif University of Technology
    Elsevier  2015
    Abstract
    Carbon nanotubes (CNTs) with and without end caps may be used for fluid storage and transport, respectively, referred to as CNT-nanovessel and CNT-nanopipe. The determination of the stiffness in the hoop (circumferential) and radial directions, ideal hoop strength, and hoop stress-strain curve of such nanostructures is of particular interest. Due to the proposed viewpoint, a chiral free-standing single-walled CNT (SWCNT) has a natural angle of twist and natural extension along the axis of the tube. For example, for the SWCNT (9,3) with diameter of 0.85 nm and chirality angle of 13.9°, the natural angle of twist per unit length is 1.45×10-3 rad/nm. Previously, only Vercosa et al. (2010) who... 

    A novel graphene nanoribbon field effect transistor with two different gate insulators

    , Article Physica E: Low-Dimensional Systems and Nanostructures ; Volume 66 , 2015 , Pages 133-139 ; 13869477 (ISSN) Akbari Eshkalak, M ; Faez, R ; Haji Nasiri, S ; Sharif University of Technology
    Elsevier  2015
    Abstract
    In this paper, a novel structure for a dual-gated graphene nanoribbon field-effect transistor (GNRFET) is offered, which combines the advantages of high and low dielectric constants. In the proposed Two Different Insulators GNRFET (TDI-GNRFET), the gate dielectric at the drain side is a material with low dielectric constant to form smaller capacitances, while in the source side, there is a material with high dielectric constant to improve On-current and reduce the leakage current. Simulations are performed based on self-consistent solutions of the Poisson equation coupled with Non-Equilibrium Green's Function (NEGF) formalism in the ballistic regime. We assume a tight-binding Hamiltonian in... 

    Higgs-mode signature in ultrafast electron dynamics in superconducting graphene

    , Article Physical Review B ; Volume 104, Issue 17 , 2021 ; 24699950 (ISSN) Pashalou, S ; Goudarzi, H ; Khezerlou, M ; Jafari, S. A ; Sharif University of Technology
    American Physical Society  2021
    Abstract
    We theoretically investigate the effect of superconductivity on the ultrafast electron dynamics in graphene interacting with an ultrashort linearly polarized optical pulse. The optical pulse, with frequency greater than 1 THz, quadratically couples to the Higgs (amplitude) mode and therefore can excite the Higgs-mode oscillations in superconductors, leading to quenching superconducting excitation energy, even in s-wave pairing symmetry. Since the duration of the used pulse is less than the electron scattering time in graphene (10-100 fs), the electron dynamics driven by the electric field of pulse remains coherent and is described within the tight-binding model of graphene. We show that the... 

    A computational study of vertical tunneling transistors based on graphene-WS2 heterostructure

    , Article Journal of Applied Physics ; Volume 121, Issue 21 , 2017 ; 00218979 (ISSN) Horri, A ; Faez, R ; Pourfath, M ; Darvish, G ; Sharif University of Technology
    American Institute of Physics Inc  2017
    Abstract
    In this paper, for the first time, we present a computational study on electrical characteristics of field effect tunneling transistors based on a vertical graphene-WS2 heterostructure and vertical graphene nanoribbon (GNR)-WS2 heterostructure (VTGNRFET). Our model uses the nonequilibrium Green's function formalism along with an atomistic tight binding (TB) method. The TB parameters are extracted by fitting the bandstructure to first principles results. We show that, due to the advantage of switching between tunneling and thermionic transport regimes, an improvement can be achieved in the electrical characteristics of the device. We find that the increase of the number of WS2 layers enhances... 

    Modeling of a vertical tunneling transistor based on Gr-hBN- χ 3borophene heterostructure

    , Article Journal of Applied Physics ; Volume 132, Issue 3 , 2022 ; 00218979 (ISSN) Abbasi, R ; Faez, R ; Horri, A ; Moravvej Farshi, M. K ; Sharif University of Technology
    American Institute of Physics Inc  2022
    Abstract
    We present a computational study on the electrical behavior of the field-effect transistor based on vertical graphene-hBN- χ 3 borophene heterostructure and vertical graphene nanoribbon-hBN- χ 3 borophene nanoribbon heterostructure. We use nonequilibrium the Green function formalism along with an atomistic tight-binding (TB) model. The TB parameters are calculated by fitting tight-binding band structure and first-principle results. Also, electrical characteristics of the device, such as ION/IOFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. We show that the increase of the hBN layer number decreases subthreshold swing and degrades the intrinsic gate-delay time.... 

    Efficient simulation of resonance Raman spectra with tight-binding approximations to density functional theory

    , Article Journal of Chemical Physics ; Volume 157, Issue 8 , Volume 157, Issue 8 , 2022 ; 00219606 (ISSN) Ashtari Jafari, S ; Jamshidi, Z ; Visscher, L ; Sharif University of Technology
    American Institute of Physics Inc  2022
    Abstract
    Resonance Raman spectroscopy has long been established as one of the most sensitive techniques for detection, structure characterization, and probing the excited-state dynamics of biochemical systems. However, the analysis of resonance Raman spectra is much facilitated when measurements are accompanied by Density Functional Theory (DFT) calculations that are expensive for large biomolecules. In this work, resonance Raman spectra are therefore computed with the Density Functional Tight-Binding (DFTB) method in the time-dependent excited-state gradient approximation. To test the accuracy of the tight-binding approximations, this method is first applied to typical resonance Raman benchmark...