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FDTD analysis of distributed amplifiers based on the fully distributed model
, Article 2007 Asia-Pacific Conference on Applied Electromagnetics, APACE2007, Melaka, 4 December 2007 through 6 December 2007 ; 2007 ; 1424414350 (ISBN); 9781424414352 (ISBN) ; Abdipour, A ; Shishegar, A. A ; Sharif University of Technology
2007
Abstract
In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line. © 2007 IEEE