Sharif Digital Repository

In the recent years, field effect transistor has been made by using graphane. But there has not been any study about bipolar transistor. Bipolar transistor can’t be constructed using graphene due to the fact that its band gap is zero. So in this thesis, in an attempt to remove this difficulty, the bipolar transistor made using graphane has been investigated and their property has been compared to those of three dimensional silicon transistors.
At the beginning of the thesis, we will have a review of graphane diode and will consider the procedure for evaluating its current which would be the report of what has been done sofar. After that we made graphane transistor using graphane diode...