Transistor Based on Graphane

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Babaee Touski, Shoeib | 2011

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Type of Document: M.Sc. Thesis
Language: Farsi
Document No: 41935 (05)
University: Sharif University of Technology
Department: Electrical Engineering
Advisor(s): Khorasani, Sina
Abstract:
In the recent years, field effect transistor has been made by using graphane. But there has not been any study about bipolar transistor. Bipolar transistor can’t be constructed using graphene due to the fact that its band gap is zero. So in this thesis, in an attempt to remove this difficulty, the bipolar transistor made using graphane has been investigated and their property has been compared to those of three dimensional silicon transistors.
At the beginning of the thesis, we will have a review of graphane diode and will consider the procedure for evaluating its current which would be the report of what has been done sofar. After that we made graphane transistor using graphane diode and obtained its currents. Following this, its current gain was evaluated which was far less than that for three dimensional transistors. Then, we study the reason for obtaining small current gain and will suggest methods for its increment. Using this method we were able to increase current gain of graphene transistor to a reasonable value which was at first, close to that for ordinary three dimensional transistors
Keywords:
Graphane ; Transistors ; Nanotechnology

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