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- Type of Document: M.Sc. Thesis
- Language: Farsi
- Document No: 44306 (05)
- University: Sharif University of Technology
- Department: Electrical Engineering
- Advisor(s): Medi, Ali
- Abstract:
- Nowadays, using of microwave integrated circuits in military and industry applications has been became popular, especially with the advent of monolithic microwave integrated circuits which provide possibility of fabrication of amplifiers in large volume with high precision and appropriate cost. Power amplifiers as the last block of transmitters, are such circuits that are too attractive in this area. Since high power amplifiers consume a lot of power in transistors, large amount of heat will be in the surface of chip. Loss of some of consumed power in amplifiers results increasing transistor’s channel and chip surface temperature. Increase in channel temperature results degradation in circuit performance and at last total chip failure. So, this heat should be conducted to the outside of the chip. Using typical heat sinks in order to cool bottom of the chip is one of the most common ways. However, low GaAs thermal conductivity, limit feasibility of cooling chips which are fabricated in this process. Here, we attempt to check the temperature of different parts of the chip with complete circuit thermal modeling and be sure that chip temperature especially channel temperature will not exceed than the reliable value for this process. On the other hand, reliability is not limited to temperature problems and some checks during design of amplifier and measurement should be applied. So, with designing of a complete 10 watt amplifier in X/Ku frequency bands in 0.25 um GaAs process with considering reliability points during design and related measurements after fabrication, we have studied this subject
- Keywords:
- Reliability ; High Power Amplifier (HPA) ; Thermal Simulation ; Gallium Arsenaide Technology ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT)
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