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Simulation of HEMT (High Electron mobility Transistor) for Communication Applications

Tahmasebi, Marzie | 2013

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  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 44681 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Sarvari, Reza
  7. Abstract:
  8. In this thesis, the simulation of HEMT for high frequency applications has been explored. It has been tried to examine the changes such as: gate recess, T-shaped gate, changing the channel length and doping of buffer layer on the performance of the proposed device. Simulation results show that the best way to improve the device performance, in particular its cut-off frequency, is increase in buffer layer doping density. Because it significantly increase the saturation current, electron mobility inside the channel, the transconductance and the cut-off frequency. If we need to lower the noise, the T-shaped gate can also be used. Also, by change in doping of donor layer, amount of 1017 cm-3 is obtained for optimized doping to achieve the maximum mobility in proposed device. After these actions, one structure which was sold by soitec company, has been examined as a HEMT. The result of this study was that with gate recess higher cut-off frequency can be obtained. Also, saturation current, electron mobility inside the channel, the transconductance and the cut-off frequency of this structure were low. So, this structure with these results is not suitable for high frequency applications. So, first HEMT with a slight increase in doping of buffer layer and shorter gaterecommended for high frequency applications
  9. Keywords:
  10. Simulation ; High Electron Mobility Field Effect Transistor (HEMT) ; Cutoff Frequency

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