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Analysis of lattice temperature effects on a GaInP/6H-SiC strained quantum-well lasers

Marjani, S ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. Publisher: 2013
  3. Abstract:
  4. In this paper, simulative study on the effects of lattice temperature on a GaInP/6H-SiC strained quantum-well (QW) laser's device is presented. Loss mechanisms are severe in the edge-emitting lasers. As a consequence, the wall-plug efficiency is sensitive to changes in temperature. The lasers used in this work were separate-confinement quantum-well lasers with a single strained GaInP, located in a latticematched waveguide core and cladding region of 6H-SiC. This paper provides the key results of the wall-plug efficiency upon the lattice temperature
  5. Keywords:
  6. Lattice temperature ; Quantum-well lasers ; Silicon carbide polymers ; Wall-plug efficiency
  7. Source: Asian Journal of Chemistry ; Volume 25, Issue 9 , Oct , 2013 , Pages 4715-4717 ; 09707077 (ISSN)
  8. URL: http://profdoc.um.ac.ir/paper-abstract-1036998.html