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Analysis of parametric oscillations in high power amplifiers

Nikandish, G ; Sharif University of Technology | 2013

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  1. Type of Document: Article
  2. Publisher: Sharif University of Technology , 2013
  3. Abstract:
  4. A large-signal analysis of sub-harmonic parametric oscillations in Power Amplifiers (PAs) is presented in this paper. Simplified models for current-voltage and channel charge characteristics of short-channel pseudomorphic High Electron Mobility Transistors (pHEMTs) are adopted to investigate the effects of the device transconductance and gate-source capacitance nonlinearities on the amplifier stability. A 5-W Ku-band PA is designed to demonstrate the application of the presented analysis. MMIC PA is implemented in a 0.25-μm GaAs pHEMT process. According to the measurements, the PA provides 37.5 dBm (5.6 W) of output power, 36% of Power Added Efficiency (PAE), and small-signal gain of 18 dB on the frequency band of 12-15 GHz
  5. Keywords:
  6. Large-signal instability ; Parametric oscillation ; Amplifiers (electronic) ; Field effect transistors ; Frequency bands ; Heterojunction bipolar transistors ; Power amplifiers ; Semiconducting aluminum compounds ; Gate source capacitance ; Large-signals ; Parametric oscillations ; pHEMT ; Power amplifiers (PAs) ; Power-added efficiency ; Pseudomorphic high electron mobility transistors (pHEMTs) ; Stability analysis ; High electron mobility transistors ; Electrical conductivity ; Frequency analysis ; Nonlinearity ; Oscillation ; Parameterization
  7. Source: Scientia Iranica ; Volume 20, Issue 6 , 2013 , Pages 2084-2092 ; 10263098 (ISSN)
  8. URL: http://www.scientiairanica.com/en/ManuscriptDetail?mid=79