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Effect of varying dielectric constant on relative stability for graphene nanoribbon interconnects
Farrokhi, M ; Sharif University of Technology | 2012
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- Type of Document: Article
- DOI: 10.4028/www.scientific.net/AMM.229-231.201
- Publisher: 2012
- Abstract:
- The remarkable properties of graphene nanoribbons (GNRs) make them attractive for nano-scale devices applications, especially for transistor and interconnect. Furthermore, for reduction interconnects signal delay, low dielectric constant materials are being introduced to replace conventional dielectrics in next generation IC technologies. With these regards, studding the effect of varying dielectric constant (e{open}r) on relative stability of graphene nanoribbons interconnect is an important viewpoint in performance evaluation of system. In this paper, Nyquist stability analysis based on transmission line modeling (TLM) for graphene nanoribbon interconnects is investigated. In this analysis, the dependence of the degree of relative stability for multilayer GNR (MLGNR) interconnects on the dielectric constant has been acquired. It is shown that, increasing the dielectric constant of each ribbon, MLGNR interconnects become more stable
- Keywords:
- Dielectric constant ; Interconnect ; Nanoribbon ; Nyquist stability criterion ; Graphene nano-ribbon ; IC technology ; Low dielectric constant materials ; Nanoribbons ; Nanoscale device ; Nyquist stability analysis ; Performance evaluation ; Relative stabilities ; Signal delays ; Transmission line modeling ; Graphene ; Nanostructures ; Permittivity ; Stability criteria ; Transmission line theory ; Dielectric materials
- Source: Applied Mechanics and Materials, 24 July 2012 through 26 July 2012, Kuala Lumpur ; Volume 229-231 , July , 2012 , Pages 201-204 ; 16609336 (ISSN) ; 9783037855102 (ISBN)
- URL: http://www.scientific.net/AMM.229-231.201