Loading...

Design of Power Amplifier in 6-18GHz Frequency Band with Employment and Evaluation Reliability Improvement Methods

Lotfi, Hadi | 2015

634 Viewed
  1. Type of Document: M.Sc. Thesis
  2. Language: Farsi
  3. Document No: 48086 (05)
  4. University: Sharif University of Technology
  5. Department: Electrical Engineering
  6. Advisor(s): Medi, Ali
  7. Abstract:
  8. Today usage of microwave integrated circuits in commercial and military applications is very common, especially with emerging of monolithic microwave integrated circuits that make mass production with good quality and price possible. A lot of attention are paid to designing power amplifiers used in the end of transmitter line. Because of power dispersion in transistor channels, high power amplifier causes excessive heat on the chip. Channel temperature increasing, causes operation retrogradation in circuits that result in destruction of the chip. So it is necessary to transfer this heat to the outside from the chip. It is usual to use a heatsink for this problem, however for low thermal transconductance of GaAs, it is difficult to transfer this heat, from transistor channel, with this method. In this thesis we have studied design procedures of wide band power amplifier in C/X/Ku frequency band. Then we designed two types of high power amplifiers in 0.25 GaAs pHEMT process, with 8 watts output power in 6-18 GHz frequency band. In this study, we have tried to improve reliability of amplifiers, thus increasing their longevity. Key words:Relaibility, Power amplifier, Wide band amplifier, pHEMT transistors, GaAs Technology
  9. Keywords:
  10. Wideband Amplifier ; Reliability ; Power Amplifier ; GaAs Solar Cell ; Pseudo High Electron Mobility Field Effect Transistor (pHEMT)

 Digital Object List