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Investigation of hydrogen sensing properties and aging effects of Schottky like Pd/porous Si

Razi, F ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1016/j.snb.2010.01.047
  3. Abstract:
  4. We prepared porous silicon samples coated by continuous palladium layer in electroless process. Scanning electron microscopy (SEM) showed cauliflower-shape Pd clusters on the surface. I-V curves of Schottky like Pd/porous Si samples were measured in air and in hydrogen. These measurements showed a metal-interface-semiconductor configuration rather than an ideal Schottky diode. Variations of the electrical current in the presence of diluted hydrogen at room temperature revealed that the samples can sense hydrogen in a wide range of concentration (100-40,000 ppm) without any saturation behavior. Hydrogen sensing properties of these samples were investigated at room temperature for a duration of nine months. Sample sensitivity (response time) decreased (increased) to a saturated value after 45 days. We discussed sensing and Schottky contact properties of the fresh and aged Pd/porous Si samples by variation of structure and chemical composition using SEM, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) data
  5. Keywords:
  6. Pd ; Porous silicon ; Schottky like based gas sensor ; Electroless ; Gas sensors ; Hydrogen gas sensor ; Schottky ; Chemical sensors ; Hydrogen ; Palladium ; Scanning electron microscopy ; Schottky barrier diodes ; X- ray diffraction ; X- ray photoelectron spectroscopy ; Semiconducting silicon compounds
  7. Source: Sensors and Actuators, B: Chemical ; Volume 146, Issue 1 , 2010 , Pages 53-60 ; 09254005 (ISSN)
  8. URL: http://www.sciencedirect.com/science/article/pii/S092540051000078X