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Layout-Based modeling and mitigation of multiple event transients

Ebrahimi, M ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1109/TCAD.2015.2459053
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2016
  4. Abstract:
  5. Radiation-induced multiple event transients (METs) are expected to become more frequent than single event transients (SETs) at nanoscale CMOS technology nodes. In this paper, a fast and accurate layout-based soft error rate (SER) assessment technique with consideration of both SET and MET fault models is presented. Despite existing techniques in which the adjacent MET sites are extracted from a logic-level netlist, we conduct a comprehensive layout analysis to obtain MET adjacent cells. Experimental results reveal that the layout-based technique is the only viable solution for identification of the adjacent cells as netlist-based techniques considerably underestimate the overall SER. Furthermore, by identifying the most vulnerable adjacent cells and increasing their physical distance in the layout using local adjustment rules, we are able to considerably reduce the overall SER without imposing any area and performance penalty. © 2015 IEEE
  6. Keywords:
  7. Multiple event transient ; Reliability ; Soft Errors ; CMOS integrated circuits ; Error correction ; High electron mobility transistors ; Radiation hardening ; Assessment technique ; Multiple bit upset ; Multiple events ; Performance penalties ; Radiation-induced ; Single event transients ; Soft error ; Viable solutions ; Transients
  8. Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems ; Volume 35, Issue 3 , 2016 , Pages 367-379 ; 02780070 (ISSN)
  9. URL: http://ieeexplore.ieee.org/document/7163566/?reload=true