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Simulation of InGaN-based near-ultraviolet/visible dual-band photodetector

Rasouli, F ; Sharif University of Technology | 2016

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  1. Type of Document: Article
  2. DOI: 10.1007/s11082-015-0306-z
  3. Publisher: Springer New York LLC , 2016
  4. Abstract:
  5. In this paper, we report on 2D numerical simulation of spectral response for InGaN dual-band photodetector operating at near ultraviolet and visible wavelengths. The back-to-back p–i–n/n–i–p integrated structure enables independent and simultaneous detection of two bands under back-side illumination. The effect of indium content and absorption layer thickness of the two sub-detectors on external quantum efficiency and optical crosstalk between two sub-detectors have been investigated. The optimum values for indium content and thickness of absorption layer in sub-detectors are determined
  6. Keywords:
  7. InGaN dual-band photodetector ; Numerical simulation ; Computer simulation ; Crosstalk ; Efficiency ; Indium ; Numerical models ; Photodetectors ; Photons ; 2-D numerical simulation ; Dual band photodetector ; External quantum efficiency ; Integrated structure ; Optical cross-talk ; Simultaneous detection ; Spectral response ; Visible wavelengths ; Quantum efficiency
  8. Source: Optical and Quantum Electronics ; Volume 48, Issue 1 , 2016 , Pages 1-11 ; 03068919 (ISSN)
  9. URL: http://link.springer.com/article/10.1007/s11082-015-0306-z