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Single-crystalline growth of CoSi 2 by refractory-interlayer- mediated epitaxy

Akhavan, O ; Sharif University of Technology | 2004

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  1. Type of Document: Article
  2. DOI: 10.1016/j.apsusc.2004.03.007
  3. Publisher: Elsevier , 2004
  4. Abstract:
  5. Single-crystal epitaxial quality of CoSi 2 films grown on Si(100) by refractory-interlayer-mediated epitaxy has been investigated. Thin layers of 10 nm co-sputtered W x Ta (1-x) , as refractory metal interlayers deposited on the Si, were followed by 25 nm of evaporated Co layer. The fabricated Co/W x Ta (1-x) /Si(100) systems were annealed in a temperature range from 400 to 1000°C in an N 2 (80%) + H 2 (20%) ambient for 1h. The annealed samples were analyzed and compared by sheet resistance measurement, X-ray diffraction, scanning electron microscopy, and wavelength dispersive spectroscopy techniques. In Co/W 0.25 Ta 0.75 /Si(100) system, with the best thermal stability, the grown CoSi 2 layer exhibits an optimum single-crystalline quality with a sheet resistance of 1.1Ω/sq at 1000°C. The achievement of the best silicide in this system is explained on the basis of a nearly instantaneous diffusion of Co through the intermediate layer at high temperatures. © 2004 Elsevier B.V. All rights reserved
  6. Keywords:
  7. CoSi 2 ; Epitaxy ; Interlayer ; Silicidation
  8. Source: Applied Surface Science ; Volume 233, Issue 1-4 , 2004 , Pages 123-128 ; 01694332 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/abs/pii/S0169433204002363