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Tunable gain SnS2/InSe Van der waals heterostructure photodetector

Hosseini, S ; Sharif University of Technology | 2022

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  1. Type of Document: Article
  2. DOI: 10.3390/mi13122068
  3. Publisher: MDPI , 2022
  4. Abstract:
  5. Due to the favorable properties of two-dimensional materials such as SnS2, with an energy gap in the visible light spectrum, and InSe, with high electron mobility, the combination of them can create a novel platform for electronic and optical devices. Herein, we study a tunable gain SnS2/InSe Van der Waals heterostructure photodetector. SnS2 crystals were synthesized by chemical vapor transport method and characterized using X-ray diffraction and Raman spectroscopy. The exfoliated SnS2 and InSe layers were transferred on the substrate. This photodetector presents photoresponsivity from 14 mA/W up to 740 mA/W and detectivity from 2.2 × 108 Jones up to 3.35 × 109 Jones by gate modulation from 0 V to +70 V. Light absorption and the charge carrier generation mechanism were studied by the Silvaco TCAD software and the results were confirmed by our experimental observations. The rather high responsivity and visible spectrum response makes the SnS2/InSe heterojunction a potential candidate for commercial visible image sensors. © 2022 by the authors
  6. Keywords:
  7. Photodetector ; Two-dimensional material ; Van der Waals heterostructure ; Indium compounds ; IV-VI semiconductors ; Light absorption ; Photodetectors ; Photons ; Selenium compounds ; Semiconducting tin compounds ; Sulfur compounds ; Transport properties ; Van der Waals forces ; Heterostructure photodetectors ; High electron mobility ; Light spectrum ; Property ; Synthesised ; Tunable gains ; Two-dimensional materials ; Van der Waal ; Van der waal heterostructure ; Visible light ; Heterojunctions
  8. Source: Micromachines ; Volume 13, Issue 12 , 2022 ; 2072666X (ISSN)
  9. URL: https://www.mdpi.com/2072-666X/13/12/2068