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Design and analysis of broadband darlington amplifiers with bandwidth enhancement in GaAs pHEMT technology

Nikandish, G ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2014.2328972
  3. Abstract:
  4. This paper presents a bandwidth enhancement technique for broadband Darlington amplifiers. A detailed analysis of the high-frequency performance of the Darlington amplifier and the effect of bandwidth enhancement is provided. A design procedure is also given for broadband feedback Darlington amplifiers with bandwidth enhancement and gain flattening. A single- and a three-stage feedback amplifier with the proposed improvements are designed and implemented in a 0.25-μm Al-GaAs-InGaAs pHEMT technology. The single-stage amplifier provides 6 ± 0.4 dB of small-signal gain in the frequency band of 1-30 GHz. The three-stage amplifier features 17.8 ± 0.8 dB of small-signal gain in the frequency band of 2-29 GHz. It provides a gain-bandwidth product of 217 GHz, which is 3.3 times larger than the unity gain frequency (fT) of the process
  5. Keywords:
  6. Darlington amplifier ; Amplifiers (electronic) ; Feedback amplifiers ; Frequency bands ; Gallium arsenide ; Semiconducting gallium ; Bandwidth enhancement ; Design and analysis ; Gain-bandwidth products ; High frequency performance ; Monolithic microwave integrated circuits (MMIC) ; Three-stage amplifiers ; Unity-gain frequencies ; Broadband amplifiers
  7. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 62, Issue 8 , August , 2014 , Pages 1705-1715 ; ISSN: 00189480
  8. URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6840373