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Reduced master equation for modeling of ferromagnetic single-electron transistor

Asgari, S ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.4028/www.scientific.net/AMM.110-116.3103
  3. Abstract:
  4. In this paper, the reduced master equation which is a fast simulation method of spin dependent transport in ferromagnetic single electron transistors is presented, for first time. This simulation method follows steady state master equation in which all charge states of the system are considered, whereas charge states are decreased in reduced master equation. This method is based on two degrees of electron freedom which are charge and spin. This is applied in the condition that orthodox tunneling theory is applicable to calculate the tunneling rate of electrons through barriers. The comparison between the I-V characteristics of a ferromagnetic single-electron transistor by following the reduced and full master equation methods for different main parameters of these transistors show that the results are exactly the same at low bias voltages. Consequently, the reduced master equation method is not only more simplified and improves the speed of numerical simulation, but also the modeling results are as accurate as the results of the full maser equation method at low bias conditions
  5. Keywords:
  6. Ferromagnetic single electron transistor ; Charge state ; Fast simulation methods ; IV characteristics ; Low bias ; Low bias voltage ; Main parameters ; Master equation method ; Master equations ; Modeling results ; Sequential tunneling regime ; Simulation ; Simulation methods ; Single electron ; Spin dependent transport ; Steady state ; Tunneling rates ; Aerospace engineering ; Capacitance measurement ; Electrons ; Equations of state ; Ferromagnetic materials ; Ferromagnetism ; Numerical methods ; Transistors ; Single electron transistors
  7. Source: Applied Mechanics and Materials, 29 July 2011 through 31 July 2011, Bangkok ; Volume 110-116 , July , 2012 , Pages 3103-3110 ; 16609336 (ISSN) ; 9783037852620 (ISBN)
  8. URL: http://www.scientific.net/AMM.110-116.3103