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Small signal circuit modeling for semiconductor self-assembled quantum dot laser

Horri, A ; Sharif University of Technology

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  1. Type of Document: Article
  2. DOI: 10.1117/1.3554394
  3. Abstract:
  4. In this paper, for the first time, we present a small signal circuit model of InGaAs/GaAs self-assembled quantum dot (QD) laser, based on the standard rate equations. By using the presented model, modulation response of QD laser is investigated. The simulation results show that retarded carrier relaxation due to phonon bottleneck degrades the modulation and impulse responses of a QD laser. It is shown that modulation bandwidth is increased with larger inhomogeneous broadening. Also, our model describes the effects of carrier recombinations inside and outside of a QD region, on the modulation response behavior
  5. Keywords:
  6. Circuit model ; Quantum dot laser ; Carrier recombination ; Carrier relaxation ; Circuit models ; InGaAs/GaAs ; Inhomogeneous broadening ; Modulation bandwidth ; Modulation response ; phonon bottleneck ; QD lasers ; Small-signal circuit ; Small-signal circuit model ; Standard rates ; Wetting layer ; Behavioral research ; Circuit theory ; Modulation ; Phonons ; Semiconductor quantum dots ; Quantum dot lasers
  7. Source: Optical Engineering ; Volume 50, Issue 3 , 2011 ; 00913286 (ISSN)
  8. URL: http://opticalengineering.spiedigitallibrary.org/article.aspx?articleid=1157792