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Novel structures for carbon nanotube field effect transistors

Faez, R ; Sharif University of Technology | 2009

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  1. Type of Document: Article
  2. DOI: 10.1142/S0217979209052911
  3. Publisher: 2009
  4. Abstract:
  5. A carbon nanotube field effect transistor (CNTFET) has been studied based on the SchrödingerPoisson formalism. To improve the saturation range in the output characteristics, new structures for CNTFETs are proposed. These structures are simulated and compared with the conventional structure. Simulations show that these structures have a wider output saturation range. With this, larger drain-source voltage (Vds) can be used, which results in higher output power. In the digital circuits, higher Vds increases noise immunity. © 2009 World Scientific Publishing Company
  6. Keywords:
  7. Carbon nanotube ; CNT ; FET ; Schrödinger equation ; Simulation
  8. Source: International Journal of Modern Physics B ; Volume 23, Issue 19 , 2009 , Pages 3669-3678 ; 02179792 (ISSN)
  9. URL: https://www.worldscientific.com/doi/10.1142/S0217979209052911