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Consistent Predictive Simulation of SRAM-Cell Performance Degradation Including Both MOSFET Fabrication Variation and Aging

Gau, H ; Sharif University of Technology | 2018

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  1. Type of Document: Article
  2. DOI: 10.1109/EDTM.2018.8421499
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2018
  4. Abstract:
  5. We have developed a methodology to simulate circuit aging including the device fabrication variation with less simulation effort. As an example a 6T SRAM cell has been investigated. It is demonstrated that the variability range of the circuit performance is further enhanced due to the long-term device aging. Among the device parameters, the impurity concentration variation plays a particularly important role for the circuit performance variation. However, most sensitive for the aging degradation is the channel-length variation, because it increases the aging effect drastically. Further, the individual aging of each MOSFET is strongly dependent on the actual stress during circuit operation. © 2018 IEEE
  6. Keywords:
  7. Aging ; Fabrication variation ; Predictive simulation ; SRAM ; Aging of materials ; Electric network analysis ; Fabrication ; Static random access storage ; Aging degradations ; Carrier trapping ; Circuit operation ; Circuit performance ; Device fabrications ; Device parameters ; Impurity concentration ; Predictive simulations ; MOSFET devices
  8. Source: 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, 13 March 2018 through 16 March 2018 ; 2018 , Pages 31-33 ; 9781538637111 (ISBN)
  9. URL: https://ieeexplore.ieee.org/abstract/document/8421499