Loading...

Real-space exciton distribution in strained-siligraphene g-SiC7

Le, P. T. T ; Sharif University of Technology | 2019

1033 Viewed
  1. Type of Document: Article
  2. DOI: 10.1063/1.5108557
  3. Publisher: American Institute of Physics Inc , 2019
  4. Abstract:
  5. Siligraphene belonging to the family of two-dimensional (2D) materials has great potential in optoelectronics due to its considerable excitonic effects. In this study, the strain effects on the electronic structure and the real-space exciton wave functions of g - SiC 7 are investigated using the first-principles calculations based on the ab initio many-body perturbation theory. Alongside the increase (decrease) of the bandgap with compressive (tensile) strain, our results show that the exciton in the siligraphene monolayer under in-plane biaxial compressive strains is much more localized than that in the case of tensile one, leading to the higher and lower exciton binding energies, respectively. Moreover, the π rarr; π and π rarr; σ exciton state transition emerges when applying the compressive and tensile strains, respectively. Overall, our study reveals that a desirable way to dissociate the electron-hole coupling and to reduce the electron-hole recombination process is applying "in-plane biaxial tensile strain," making g - SiC 7 an excellent potential functional 2D semiconductor in optoelectronics. © 2019 Author(s)
  6. Keywords:
  7. Binding energy ; Calculations ; Electronic structure ; Excitons ; Perturbation techniques ; Semiconducting silicon compounds ; Silicon carbide ; Wave functions ; Wide band gap semiconductors ; Biaxial compressive strain ; Biaxial tensile strain ; Electron hole recombination process ; Exciton-binding energy ; Excitonic effect ; First-principles calculation ; Many body perturbation theory ; Two Dimensional (2 D) ; Tensile strain
  8. Source: Journal of Applied Physics ; Volume 126, Issue 6 , 2019 ; 00218979 (ISSN)
  9. URL: https://aip.scitation.org/doi/abs/10.1063/1.5108557