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Full quantum mechanical simulation of a novel nanoscale DG-MOSFET: 2D NEGF approach
Dehdashti, N ; Sharif University of Technology | 2007
578
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- Type of Document: Article
- DOI: 10.1109/AFRCON.2007.4401477
- Publisher: 2007
- Abstract:
- In this paper the electrical characteristics of a novel nanoscale double-gate MOSFET (DG-MOSFET) have been investigate by a full Quantum Mechanical simulation framework. This framework consists of Non-Equilibrium Green's Function (NEGF) solved self-consistently with Poisson's Equation. Quantum transport equations are solved in two-dimension (2-D) by recursive NEGF method in active area of the device to obtain the charge density and Poisson's equation is solved in entire domain of simulation to get potential profile. Once self-consistently achieved all parameters of interest (e.g. potential profile, charge density, DIBL, etc) can be measured. In this novel DG-MOSFET structure, a front gate consists of two side gates to electrically shield the channel region from any drain voltage variation. This structure exhibits significantly better short channel effects than conventional DG-MOSFET in nanometer regime. ©2007 IEEE
- Keywords:
- Charge density ; CMOS integrated circuits ; Differential equations ; Electric currents ; Galerkin methods ; Green's function ; Nanostructured materials ; Nanotechnology ; Poisson distribution ; Poisson equation ; Quantum chemistry ; Quantum electronics ; 2-D quantum mechanical simulation ; Active areas ; Channel regions ; DG-MOSFET ; Double-Gate MOSFET ; Drain voltages ; Electrical characteristics ; Nano scaling ; Nano-meter regimes ; Non-equilibrium green's function ; Non-equilibrium green's function (NEGF) ; Poten tial profile ; Quantum mechanical simulation ; Quantum transport equations ; Short channel effects (SCEs) ; Short-channel effects ; MOSFET devices
- Source: IEEE AFRICON 2007, Windhoek, 26 September 2007 through 28 September 2007 ; December , 2007 ; 142440987X (ISBN); 9781424409877 (ISBN)
- URL: https://ieeexplore.ieee.org/document/4401477