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Structure and composition of the segregated Cu in V 2 O 5 /Cu system

Ahadian, M. M ; Sharif University of Technology | 2006

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  1. Type of Document: Article
  2. DOI: 10.1016/j.apsusc.2006.05.026
  3. Publisher: Elsevier , 2006
  4. Abstract:
  5. We have investigated segregation of copper at the surface of V 2 O 5 films deposited onto Cu substrate by employing surface analysis techniques. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) confirmed that the Cu is segregated at the surface and its chemical state is Cu 2 O. According to secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS), the Cu concentration inside the deposited V 2 O 5 layer is low. Ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling spectroscopy (STS) revealed the segregation alters the surface local density of states. Surface analysis of deposited samples in ultra high vacuum (UHV) condition verified that the segregation occurs during the deposition. We have extended kinetic tight binding Ising model (KTBIM) to explain the surface segregation during the deposition. Simulation data approve the possibility of surface segregation during room temperature deposition. These results point out that on pure Cu substrate, oxidation occurs during the segregation and low surface energy of Cu 2 O is the original cause of the segregation. © 2006 Elsevier B.V. All rights reserved
  6. Keywords:
  7. Auger electron spectroscopy ; Computer simulation ; Secondary ion mass spectrometry ; Thin films ; Vanadium compounds ; X ray photoelectron spectroscopy ; Surface segregation ; Thin film deposition ; Vanadium pentoxide ; Copper
  8. Source: Applied Surface Science ; Volume 253, Issue 5 , 2006 , Pages 2581-2588 ; 01694332 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/pii/S0169433206007070