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Structure transition of single-texture CoSi 2 nanolayer grown by refractory-interlayer-mediated epitaxy method

Akhavan, O ; Sharif University of Technology | 2006

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  1. Type of Document: Article
  2. DOI: 10.1016/j.apsusc.2006.06.032
  3. Publisher: Elsevier , 2006
  4. Abstract:
  5. In this investigation, the crystalline structure of a nanometric CoSi 2 layer, formed in heat treated Co/W x Ta (1-x) /Si(1 0 0) systems, has been studied by XRD analysis. Careful measurements of the diffraction intensities revealed that temporary formation of a metastable diamond cubic structure of CoSi 2 phase, rather than its usual CaF 2 structure, was occurred. It has been shown that formation of this metastable structure depends on the kind of the applied interlayer in addition to the annealing temperature. Among the studied systems with x = 0, 0.25, 0.5, 0.75 and 1, the second and the last systems resulted in growing a (1 0 0) single-texture CoSi 2 layer with the preferred usual CaF 2 structure, a strained lattice parameter, and the best thermal stability (900-1000 °C). © 2006 Elsevier B.V. All rights reserved
  6. Keywords:
  7. Annealing ; Crystal structure ; Epitaxial growth ; Heat treatment ; Lattice constants ; Nanotechnology ; X ray diffraction analysis ; Annealing temperature ; Diamond cubic structure ; Interlayers ; Metastable structure ; Silicide ; Cobalt compounds
  8. Source: Applied Surface Science ; Volume 253, Issue 5 , 2006 , Pages 2953-2957 ; 01694332 (ISSN)
  9. URL: https://www.sciencedirect.com/science/article/pii/S0169433206008762