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A 10-W X-band class-F high-power amplifier in a 0.25-μm GaAs pHEMT technology

Alizadeh, A ; Sharif University of Technology | 2021

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  1. Type of Document: Article
  2. DOI: 10.1109/TMTT.2020.3033819
  3. Publisher: Institute of Electrical and Electronics Engineers Inc , 2021
  4. Abstract:
  5. In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to provide 39-40-dBm output power. The class-F HPA achieves a 10-W output power and a peak power added efficiency (PAE) of 63% for pulsed-mode operation with a pulse repetition frequency (PRF) of 1 kHz and a duty cycle of 10%. The measured peak output power and PAE in the continuous-wave (CW) operation are 9.3 W and 58%, respectively. © 1963-2012 IEEE
  6. Keywords:
  7. Capacitance ; Gallium arsenide ; III-V semiconductors ; Semiconducting gallium ; Continuous-wave operations ; Design Methodology ; High power amplifier ; Parasitic capacitance ; Peak output power ; Proof of concept ; Pulse repetition frequencies ; Pulsed-mode operation ; Power amplifiers
  8. Source: IEEE Transactions on Microwave Theory and Techniques ; Volume 69, Issue 1 , 2021 , Pages 157-169 ; 00189480 (ISSN)
  9. URL: https://ieeexplore.ieee.org/document/9250592