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Analysis and simulation of asymmetrical nanoscale self-switching transistor

Horri, A ; Sharif University of Technology | 2021

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  1. Type of Document: Article
  2. DOI: 10.1080/02286203.2021.1972912
  3. Publisher: Taylor and Francis Ltd , 2021
  4. Abstract:
  5. In this paper, we present a computational study on the electrical behaviour of self-switching transistors (SSTs) based on InGaAs/InP heterojunction. Our simulation is based on the solution of Poisson and Schrodinger equations self-consistently by using Finite Element Method (FEM). By using this method, electrical characteristics of device, such as (Formula presented.) ratio, subthreshold swing, and intrinsic gate-delay time are investigated. Also, the effects of geometrical variations on the electrical parameters of SSTs are simulated. We show that appropriate design of the device allows current modulation exceeding (Formula presented.) at room temperature. © 2021 Informa UK Limited, trading as Taylor & Francis Group
  6. Keywords:
  7. Gallium compounds ; Heterojunctions ; Schrodinger equation ; Semiconducting indium gallium arsenide ; Analysis and simulation ; Appropriate designs ; Computational studies ; Electrical characteristic ; Electrical parameter ; Geometrical variations ; Intrinsic gate delay ; Subthreshold swing ; Oceanography
  8. Source: International Journal of Modelling and Simulation ; 2021 ; 02286203 (ISSN)
  9. URL: https://www.tandfonline.com/doi/abs/10.1080/02286203.2021.1972912