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Optoelectronic properties of thermally coated tin selenide thin films for photovoltaics

Ali, N ; Sharif University of Technology | 2021

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  1. Type of Document: Article
  2. DOI: 10.1002/er.7402
  3. Publisher: John Wiley and Sons Ltd , 2021
  4. Abstract:
  5. In this study, 490 nm thin tin selenide thin films were deposited by facile co-evaporation techniques using Sn and Se sources on a clean glass substrate. The thin films were annealed at moderate annealing temperature followed by characterization and analysis. The thin annealed films possess polycrystalline nature and orthorhombic structure with an average grain size of 130 nm. The band gap assessed from absorption spectra for the highly annealed sample was 1.52 eV. The resistivity and sheet resistance were measured with four-probe techniques and the sheet resistance was =1.362 × 104 ohm for the highly annealed film. © 2021 John Wiley & Sons Ltd
  6. Keywords:
  7. Energy gap ; Sheet resistance ; Substrates ; Thin films ; X ray diffraction ; Annealed films ; Annealing temperatures ; Clean glass substrates ; Co-evaporation techniques ; Optoelectronics property ; Orthorhombic structures ; Photovoltaics ; Polycrystalline ; Thin-films ; XRD ; Annealing
  8. Source: International Journal of Energy Research ; 2021 ; 0363907X (ISSN)
  9. URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/er.7402