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The Pr and oxygen correlation in the GdPr123 system

Khosroabadi, H ; Sharif University of Technology | 2002

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  1. Type of Document: Article
  2. DOI: 10.1142/S0217984902004366
  3. Publisher: 2002
  4. Abstract:
  5. We prepared single-phase polycrystalline Gd1-xPrx Ba2Cu3O7-δ samples with x = 0, 0.10, 0.15, and 0.20. The deoxygenation process of these samples was performed by an annealing method. Electrical resistivity measurements revealed depression of the transition temperature with the increase of x and δ. We calculated the hole concentration in the CuO2 plane for different values of x and δ. A linear dependence of transition temperature and hole concentration in the CuO2 plane was found as a function of 2δ + x. It is proposed that a combination of the localization and filling of holes should be considered as the effective mechanisms for the appearance of the Pr anomaly in HTSCs
  6. Keywords:
  7. Analytic method ; Temperature dependence ; Measurement ; Mathematical computing ; Electric resistance ; Crystallization ; Crystal ; Correlation analysis ; Chemical modification ; Concentration process
  8. Source: Modern Physics Letters B ; Volume 16, Issue 25 , 2002 , Pages 943-953 ; 02179849 (ISSN)
  9. URL: https://www.worldscientific.com/doi/10.1142/S0217984902004366