Loading...

Modeling of a vertical tunneling transistor based on Gr-hBN- χ 3borophene heterostructure

Abbasi, R ; Sharif University of Technology | 2022

69 Viewed
  1. Type of Document: Article
  2. DOI: 10.1063/5.0092647
  3. Publisher: American Institute of Physics Inc , 2022
  4. Abstract:
  5. We present a computational study on the electrical behavior of the field-effect transistor based on vertical graphene-hBN- χ 3 borophene heterostructure and vertical graphene nanoribbon-hBN- χ 3 borophene nanoribbon heterostructure. We use nonequilibrium the Green function formalism along with an atomistic tight-binding (TB) model. The TB parameters are calculated by fitting tight-binding band structure and first-principle results. Also, electrical characteristics of the device, such as ION/IOFF ratio, subthreshold swing, and intrinsic gate-delay time, are investigated. We show that the increase of the hBN layer number decreases subthreshold swing and degrades the intrinsic gate-delay time. The device allows current modulation 177 at room temperature for a 1.2 V gate-source bias voltage. © 2022 Author(s)
  6. Keywords:
  7. Electric field effects ; Field effect transistors ; Graphene ; Graphene transistors ; Computational studies ; Electrical behaviors ; Field-effect transistor ; Gate-delay time ; Graphene nanoribbons ; Intrinsic gate delay ; Non equilibrium ; Sub-threshold swing(ss) ; Tight binding ; Vertical tunneling ; Nanoribbons
  8. Source: Journal of Applied Physics ; Volume 132, Issue 3 , 2022 ; 00218979 (ISSN)
  9. URL: https://pubs.aip.org/aip/jap/article-abstract/132/3/034302/2837122/Modeling-of-a-vertical-tunneling-transistor-based