Loading...
Search for: iii-v-semiconductors
0.007 seconds
Total 37 records

    A 6–12 GHz wideband low-noise amplifier GaAs FET design with 0.8-dB average NF and 25-dB gain

    , Article Microwave and Optical Technology Letters ; Volume 64, Issue 11 , 2022 , Pages 1883-1887 ; 08952477 (ISSN) Rezaee, S ; Sharif University of Technology
    John Wiley and Sons Inc  2022
    Abstract
    Low-noise amplifiers (LNAs) with low-noise performance are critical components in communication systems. However, reaching a high level of performance is difficult. This study introduces a LNA for radio frequency front-end receivers with a frequency range of 6–12 GHz. The planned LNA contains a two-stage high-electron-mobility transistor cascade amplifier with a minimum measured noise figure of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a gallium arsenide field-effect transistor transistor (CE3512K2) because of its good low-noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over... 

    Lateral BN-BCN heterostructure tunneling transistor with large current modulation

    , Article ACS Applied Electronic Materials ; Volume 4, Issue 7 , 2022 , Pages 3520-3524 ; 26376113 (ISSN) Horri, A ; Faez, R ; Sharif University of Technology
    American Chemical Society  2022
    Abstract
    This paper, for the first time, presents a lateral tunneling transistor based on a two-dimensional boron nitride (BN) and hexagonal boron-carbon-nitrogen (hBCN) heterostructure. The device operation is analyzed based on a non-equilibrium Greens Function (NEGF) method and an atomistic tight-binding (TB) model. The TB hopping parameters are achieved by fitting the bandstructure to density functional theory (DFT) results. This model has been used to calculate the electrical characteristics of the device, such as ION/IOFFratio, subthreshold swing, and intrinsic gate-delay time. The results indicate a switching ratio of over eight orders of magnitude, much higher than the previous two-dimensional... 

    Nanoplasma-Based millimeter-wave modulators on a single metal layer

    , Article IEEE Electron Device Letters ; Volume 43, Issue 8 , 2022 , Pages 1355-1358 ; 07413106 (ISSN) Samizadeh Nikoo, M ; Dilmaghanian, M. O ; Farzaneh, F ; Matioli, E ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2022
    Abstract
    Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of nanoplasma switches to demonstrate on-chip millimeter-wave modulators that rely only on a single metal layer. We show amplitude shift keying (ASK) modulation with self-synthesized carrier frequencies up to 66 GHz (limited by the bandwidth of our experimental setup), with output powers up to 30 dBm. These all-metal nanoplasma modulators are low cost, and generally compatible with different platforms, from CMOS and III-V compounds to flexible... 

    Superhydrophobic and thermally conductive carbon black/hexagonal boron nitride@Fe3O4/cellulose composite paper for electromagnetic interference shielding

    , Article Synthetic Metals ; Volume 285 , 2022 ; 03796779 (ISSN) Habibi, N ; Pourjavadi, A ; Sharif University of Technology
    Elsevier Ltd  2022
    Abstract
    Herein, a series of superhydrophobic thin polyacrylic resin-coated carbon black (CB)/hexagonal boron nitride (h-BN)@Fe3O4/cellulose composite papers with good flexibility, low density (~0.67 g/cm3), high electrical conductivity (~0.065 S/cm), good thermal conductivity (0.462 W.m−1. K−1), and with water contact angle (WCA) of 153° were successfully fabricated by a facile dip-coating/spraying method. The CB-BN@Fe3O4 distribution in cellulose matrix provided high electrical conductivity in the in-plane and thickness directions. The electrical conductivity in both in-plane and thickness directions increased by increasing the number of vacuum-assisted dip-coating cycles. Moreover, these... 

    Mechanism of the motion of nanovehicles on hexagonal boron-nitride: A molecular dynamics study

    , Article Computational Materials Science ; Volume 207 , 2022 ; 09270256 (ISSN) Vaezi, M ; Nejat Pishkenari, H ; Nemati, A ; Sharif University of Technology
    Elsevier B.V  2022
    Abstract
    Nanocars have been proposed to transport nanomaterials on the surface. Study of the mechanism of the motion of nanocars has attracted a lot of interests due to the potential ability of these nano-vehicles in the construction of nanostructures with bottom-up approach. Using molecular dynamics simulations, we study the motion of two nano-vehicles named “Nanocar” and “Nanotruck” on hexagonal boron-nitride monolayer. The obtained results reveals that, boron-nitride is an appropriate option to obtain higher mobility of nanocars compared with metal substrates. Considering different temperatures reveals that nanocars start to move on the BN at 200 K, while long range motions are observed at 400 K... 

    Generalized state-plane analysis of bidirectional CLLC resonant converter

    , Article IEEE Transactions on Power Electronics ; Volume 37, Issue 5 , 2022 , Pages 5773-5785 ; 08858993 (ISSN) Rezayati, M ; Tahami, F ; Schanen, J. L ; Sarrazin, B ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2022
    Abstract
    The CLLC resonant converter is a promising candidate for high efficient, bidirectional power transfer applications, such as vehicle-to-grid on-board charger and hybrid vehicle dc-dc converter. Nevertheless, the analysis of CLLC still remains challenging because of its complex multiresonant nature and several storage elements. In this article, a circuit analysis method based on change of variables is presented that maps the state-space equations into two decoupled sets of equations. The analyses are carried out in two state-plane coordinate systems, then the results are mapped onto the original region. The proposed method is then used to thoroughly analyze the CLLC resonant converter... 

    Performance tradeoff of MVNOs in OFDMA-Based virtualized wireless networks

    , Article IEEE Transactions on Vehicular Technology ; Volume 71, Issue 1 , 2022 , Pages 697-712 ; 00189545 (ISSN) Mili, M.R ; Li, S ; Mokhtari, F ; Derakhshani, M ; Ashtiani, F ; Le-Ngoc, T ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2022
    Abstract
    In this paper, we analyze the tradeoff between the profits gained by mobile virtual network operators (MVNOs) in an orthogonal frequency division multiple access (OFDMA)-based virtualized wireless network (VWN). In this respect, MVNOs rent the network resources from a mobile network operator (MNO) to create virtual resources based on allocated rates and the cost due to allocated transmit powers in two different strategies: resource-based isolation strategy and rate-based isolation strategy. In resource-based isolation strategy, it is assumed that the whole bandwidth in each base station is divided equally between MVNOs whereas in rate-based isolation strategy, the whole bandwidth in each... 

    Magnetic, thermally stable, and superhydrophobic polyurethane sponge: A high efficient adsorbent for separation of the marine oil spill pollution

    , Article Chemosphere ; Volume 287 , 2022 ; 00456535 (ISSN) Habibi, N ; Pourjavadi, A ; Sharif University of Technology
    Elsevier Ltd  2022
    Abstract
    Herein, we demonstrated a facile method for the fabrication of magnetic and superhydrophobic polyurethane sponge with water contact angle of 159° as an adsorbent for cleanup the marine oil spill pollution. For this aim, a polyurethane sponge was coated with carbon black (CB), hexagonal boron nitride (h-BN)@Fe3O4, and acrylic resin and then characterized by different techniques. Owing to the chemical and thermal stability of h-BN and CB, the modified sponge was stable under corrosive conditions (pH = 1–14 and salt solutions) and at different temperatures (−12 °C–105 °C). In addition to common oils and organic solvents, we also used the real spilled oils containing monoaromatics and... 

    A comprehensive review on planar boron nitride nanomaterials: From 2D nanosheets towards 0D quantum dots

    , Article Progress in Materials Science ; Volume 124 , 2022 ; 00796425 (ISSN) Angizi, S ; Alem, S. A. A ; Hasanzadeh Azar, M ; Shayeganfar, F ; Manning, M. I ; Hatamie, A ; Pakdel, A ; Simchi, A ; Sharif University of Technology
    Elsevier Ltd  2022
    Abstract
    Moving from two-dimensional hexagonal boron nitride (2D h-BN) flatlands towards their quantum sized zero-dimensional (0D) islands, as the newest member of the h-BN family, has recently opened up novel research areas due to the emergence of unique optical and physicochemical properties, excellent thermal and chemical stability, and desirable biocompatibility. This review elaborates on the fundamental properties of 2D and 0D h-BN nanomaterials and covers the latest progress in the fabrication and applications of BN nanosheets (BNNSs) and quantum dots (BNQDs). Initially, the transformation of properties in h-BN nanomaterials is discussed when moving from the 2D realm towards the 0D quantum... 

    Thermally conductive and superhydrophobic polyurethane sponge for solar-assisted separation of high-viscosity crude oil from water

    , Article ACS Applied Materials and Interfaces ; Volume 14, Issue 5 , 2022 , Pages 7329-7339 ; 19448244 (ISSN) Habibi, N ; Pourjavadi, A ; Sharif University of Technology
    American Chemical Society  2022
    Abstract
    The rapid and effective separation of high-viscosity heavy crude oil from seawater is a worldwide challenge. Herein, an ultralow density, photothermal, superhydrophobic, and thermally conductive polyurethane/polyaniline/hexagonal boron nitride@Fe3O4/polyacrylic-oleic acid resin sponge (PU/PANI/h-BN@Fe3O4/AR) was fabricated with a water contact angle (WCA) of 158°, thermal conductivity of 0.76 W m-1 K-1, density of 0.038 g cm-3, limited oxygen index (LOI) of 28.82%, and porosity of 97.97% and used for solar-assisted separation of high-viscosity crude oil from water. Photothermal components were composed of PANI and Fe3O4, while h-BN particles were used as thermally conductive and flame... 

    Zn-rich (GaN)1−x(ZnO)x: a biomedical friend?

    , Article New Journal of Chemistry ; Volume 45, Issue 8 , 2021 , Pages 4077-4089 ; 11440546 (ISSN) Bagherzadeh, M ; Rabiee, N ; Fatahi, Y ; Dinarvand, R ; Sharif University of Technology
    Royal Society of Chemistry  2021
    Abstract
    A Zn-Rich (GaN)1−x(ZnO)xnanostructure was synthesized with the assistance of a high-gravity technique in order to reduce the reaction time and temperature. The synthesized inorganic nanomaterial has been applied in both drug and gene delivery systems, and as the first fully inorganic nanomaterial, it was investigated in a comprehensive cellular investigation as well. In order to increase the potential bioavailability, as well as the interactions with the pCRISPR, the nanomaterial was enriched with additional Zn ions. The nanomaterial and the final nanocarrier were characterized at each step before and after any biological analysisviaFESEM, AFM, TEM, FTIR and XRD. The polymer coated... 

    Sensitivity analysis of the efficiency of Compton camera to the detector parameters using the GEANT4 computer code

    , Article Applied Radiation and Isotopes ; Volume 176 , 2021 ; 09698043 (ISSN) Niknami, M ; Hosseini, S. A ; Loushab, M. E ; Sharif University of Technology
    Elsevier Ltd  2021
    Abstract
    Compton imaging is an imaging technique in which Compton scattering is used to produce images from a gamma-ray source. Compton imaging systems are also known as Compton camera. The basic design of Compton imaging systems consists of two-position detectors that are sensitive to the position and energy scattered from gamma rays. Compton camera efficiency is defined as the fraction of photons entering the scatterer (disperse) detector that undergoes only one Compton scattering and is then photoelectrically absorbed in the absorber detector. In the present study, the efficiency of a Compton camera was investigated based on semiconductor detectors using the GEANT4 simulation toolkit. In this... 

    Thermal and electrical conductivity of a graphene-based hybrid filler epoxy composite

    , Article Journal of Materials Science ; Volume 56, Issue 27 , 2021 , Pages 15151-15161 ; 00222461 (ISSN) Nouri Borujerdi, A ; Kazemi Ranjbar, S ; Sharif University of Technology
    Springer  2021
    Abstract
    The development of polymer-based composites with thermal transport capability has now become essential in response to the efficient thermal management required in electronic and energy conversion devices. In this work, a novel hybrid filler consisting of graphene nanoplatelet (GNP) and boron nitride microparticles (micro-BN) is used to improve the thermal conductivity of epoxy composite. The GNPs with an average lateral size of 8 µm and an average thickness of 5 nm are in the same volume range with the 1 µm size micro-BN particles. According to the results, the thermal conductivity of the composites changes abruptly with increasing micro-BN loading at fixed GNP loading, which is attributed... 

    Providing Multicolor Plasmonic Patterns with Au@Ag Core-Shell Nanostructures for Visual Discrimination of Biogenic Amines

    , Article ACS Applied Materials and Interfaces ; Volume 13, Issue 17 , 2021 , Pages 20865-20874 ; 19448244 (ISSN) Orouji, A ; Ghasemi, F ; Bigdeli, A ; Hormozi Nezhad, M. R ; Sharif University of Technology
    American Chemical Society  2021
    Abstract
    Biogenic amines (BAs) are known as substantial indicators of the quality and safety of food. Developing rapid and visual detection methods capable of simultaneously monitoring BAs is highly desired due to their harmful effects on human health. In the present study, we have designed a multicolor sensor array consisting of two types of gold nanostructures (i.e., gold nanorods (AuNRs) and gold nanospheres (AuNSs)) for the discrimination and determination of critical BAs (i.e., spermine (SM), tryptamine (TT), ethylenediamine (EA), tyramine (TR), spermidine (SD), and histamine (HT)). The design principle of the probe was based on the metallization of silver ions on the surface of AuNRs and AuNSs... 

    Stabilisation of multi-loop amplifiers using circuit-based two-port models stability analysis

    , Article IET Circuits, Devices and Systems ; Volume 15, Issue 6 , 2021 , Pages 553-559 ; 1751858X (ISSN) Pasdar, A ; Meghdadi, M ; Medi, A ; Sharif University of Technology
    John Wiley and Sons Inc  2021
    Abstract
    This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi-loop circuits and to design the required stabilization network. Presenting several provisions, the return ratios are extracted by employing immittance or hybrid matrices (Z, Y, G or H) of active two ports. Using these matrices, instead of the S-parameters, facilitates the selection of an appropriate stabilizer network. As a practical case, a non-uniform distributed amplifier (NDA) is designed and inspected for potential instabilities. The presented procedure detects instability associated with one of the NDA circuit's loops, and an appropriate stabilization... 

    Generalized State-Plane analysis of bidirectional CLLC resonant converter

    , Article IEEE Transactions on Power Electronics ; 2021 ; 08858993 (ISSN) Rezayati, M ; Tahami, F ; Schanen, J ; Sarrazin, B ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2021
    Abstract
    The CLLC resonant converter is a promising candidate for high efficient, bidirectional power transfer applications such as vehicle-to-grid (V2G) on-board charger and hybrid vehicle DC-DC converter. Nevertheless, the analysis of CLLC still remains challenging because of its complex multi-resonant nature and several storage elements. In this paper, a circuit analysis method based on change of variables is presented that maps the state space equations into two decoupled sets of equations. The analyses are carried out in two state-plane coordinate systems, then the results are mapped onto the original region. The proposed method is then used to thoroughly analyze the CLLC resonant converter... 

    The most optimal barrier height of InGaN light-emitting diodes

    , Article Applied Physics A: Materials Science and Processing ; Volume 127, Issue 2 , 2021 ; 09478396 (ISSN) Alam Varzaneh Isfahani, M. H ; Faez, R ; Sharif University of Technology
    Springer Science and Business Media Deutschland GmbH  2021
    Abstract
    In this paper, a novel structure is presented in order to decrease the polarization charges of quantum wells. The main purpose of this design is to make electron and hole wavefunctions closer to each other and to increase overlap integral following an increase of radiative recombination rates and internal quantum efficiency. Furthermore, carriers will be increased and become more balanced and identical which leads to an increase in efficiency of light-emitting diodes. The improvement of radiative recombination rates is studied in new structures. Energy bands diagram, carriers density, current density–voltage, and power density–current density are used to demonstrate the superior performance... 

    A 10-W X-Band class-f high-power amplifier in a 0.25-μm GaAs pHEMT technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 69, Issue 1 , 2021 , Pages 157-169 ; 00189480 (ISSN) Alizadeh, A ; Yaghoobi, M ; Meghdadi, M ; Medi, A ; Kiaei, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2021
    Abstract
    In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

    The most optimal barrier height of InGaN light-emitting diodes

    , Article Applied Physics A: Materials Science and Processing ; Volume 127, Issue 2 , 2021 ; 09478396 (ISSN) Alam Varzaneh Isfahani, M. H ; Faez, R ; Sharif University of Technology
    Springer Science and Business Media Deutschland GmbH  2021
    Abstract
    In this paper, a novel structure is presented in order to decrease the polarization charges of quantum wells. The main purpose of this design is to make electron and hole wavefunctions closer to each other and to increase overlap integral following an increase of radiative recombination rates and internal quantum efficiency. Furthermore, carriers will be increased and become more balanced and identical which leads to an increase in efficiency of light-emitting diodes. The improvement of radiative recombination rates is studied in new structures. Energy bands diagram, carriers density, current density–voltage, and power density–current density are used to demonstrate the superior performance... 

    A 10-W X-band class-F high-power amplifier in a 0.25-μm GaAs pHEMT technology

    , Article IEEE Transactions on Microwave Theory and Techniques ; Volume 69, Issue 1 , 2021 , Pages 157-169 ; 00189480 (ISSN) Alizadeh, A ; Yaghoobi, M ; Meghdadi, M ; Medi, A ; Kiaei, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2021
    Abstract
    In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16...