Sharif Digital Repository

In this brief, a design technique for tapered distributed low-noise amplifiers (LNAs) is presented. A circuit model is developed for gain and noise analysis of a nonuniform distributed amplifier (DA). It is shown that by optimal tapering of gate and drain transmission lines and transistors, the tapered distributed LNA can provide lower broadband average noise figure (NF) compared to a uniform DA. A proof-of-concept integrated circuit is implemented using a 0.1-μm GaAs pHEMT process. The amplifier provides average gain of 15.2 dB and 3-dB bandwidth of 43.3 GHz. The average NF of 2.3 dB and minimum NF of 2.0 dB are achieved over 2-40 GHz. The chip consumes 55 mA current from a 2-V supply. ©... 

Two-dimensional boron nitride quantum dots (2D BNQDs) with excellent chemical stability, high photoluminescence efficiency, and low toxicity are a new class of advanced materials for biosensing and bioimaging applications. To overcome the current challenge about the lack of facile, scalable, and reproducible synthesis approach of BNQDs, we introduce a green and facile approach based on mechanochemical exfoliation of bulk h-BN particles in ethanol. Few-layered hydroxylated-functionalized QDs with a thickness of 1-2 nm and a lateral dimension of 2-6 nm have been prepared. The synthesized nanocrystals exhibit a strong fluorescence emission at 407 and 425 nm with a quantum efficiency of ∼6.2%.... 

Recent investigations on multifunctional piezoelectric semiconductors have shown their excellent potential as photovoltaic components in high-efficiency third-generation quantum nanostructure (QNS) solar cells. The current work is devoted to studying the electro-elastic behavior of high-density QNS photovoltaic semiconductors within which initial mismatch strains of arrays of quantum dots (QDs) or quantum wires (QWRs) induce coupled electro-mechanical fields. The inter-nanostructure couplings which are of great importance in high-density QNS arrays are incorporated in the presented analytical framework. In practice, QNSs with different geometries such as spherical, cuboidal, or pyramidal QDs... 

In the present paper, phase and microstructural characterization of low carbon MgO-C refractories with addition of Fe-catalyzed phenolic resins as binder were investigated. Initially, phenolic resin was modified using various amounts of Fe particles as catalyst originated from iron nitrate ([Fe(NO3)3·9H2O]). The MgO-C matrix compositions were prepared by using 7% of modified phenolic resin, shaped and cured at 200 °C for 24 h. The cured samples were coked in the temperature range from 800 to 1400 °C and then characterized by XRD and FE-SEM techniques. Based on attained results, in-situ graphitic carbons, particularly in carbon nanotubes (CNTs) network were gradually formed from Fe-catalyzed... 

We investigate the underlying physics of degradation/recovery of a metal/n-CdTe Schottcky junction under reverse or forward bias stressing conditions. We used Sah-Noyce-Shockley (SNS) theory to investigate if the swept of Fermi level pinning at different levels (under forward/reverse bias) is the origin of change in current-voltage characteristics of the device. This theory is based on Shockley-Read-Hall recombination within the depletion width and takes into account the interface defect levels. Fermi Level Pinning theory was primarily introduced by Ponpon and developed to thin film solar cells by Dharmadasa's group in Sheffield University-UK. The theory suggests that Fermi level pinning at... 

In this paper, two output matching networks (OMNs) are proposed for integrated class-J and class-J-1 mode power amplifiers (PAs). The first MN provides the required load impedances of the class-J mode (i.e., Z(f0) = Ropt + j Ropt and Z(2 f0) = -j (3π/8)Ropt), where as the second MN realizes the optimal impedances of class-J-1 PAs (i.e., Z(f0) = Ropt - j Ropt and Z(2 f0) = j (3π/8)Ropt ). Detailed theoretical analyses are presented for each MN, and the values of matching components (i.e., inductors and capacitors) are obtained in terms of Ropt. Analytical derivations are verified by simulation results, while bandwidth and loss performances of each MN are also characterized. Two... 

Al-Si3N4 couples were heat-treated at 850-1150°C for 250 hours. The thickness of the interacted area was measured by scanning electron microscopy (SEM) and scanning/transmission electron microscopy (TEM/STEM). The interaction rate increases exponentially with inverse temperature, with an activation energy of 194.23 kJ/mol and diffusion pre-coefficient of 5 × 10−9 m2/s, indicating that the interaction is diffusion-dependent. As the results showed, the interfacial area is comprised of Al alloy channels, Si precipitates, and AlN grains. Al-Si transfer through the solid solution (Si3-xAlxN4-y) at the interface of Al alloy and β-Si3N4 grains controls the kinetic of the interaction. When... 

An analytical approach for design optimization of multi-stage LNAs with common source topology is developed. This paper reviews and analyses simultaneous noise and input impedance matching in three different topologies including common source amplifier with inductive degeneration, resistive feedback and dual feedback in order to achieve maximum available gain and minimum possible noise figure (NF). A study on multi-stage LNAs is performed to calculate optimum input impedance of each stage for minimum overall NF while considering the gain and NF of that stage in addition to the effect of noise of the following stages. MATLAB was used to calculate the starting point of design optimization in a... 

In the present paper, phase and microstructural characterization of low carbon MgO-C refractories with addition of Fe-catalyzed phenolic resins as binder were investigated. Initially, phenolic resin was modified using various amounts of Fe particles as catalyst originated from iron nitrate ([Fe(NO3)3·9H2O]). The MgO-C matrix compositions were prepared by using 7% of modified phenolic resin, shaped and cured at 200 °C for 24 h. The cured samples were coked in the temperature range from 800 to 1400 °C and then characterized by XRD and FE-SEM techniques. Based on attained results, in-situ graphitic carbons, particularly in carbon nanotubes (CNTs) network were gradually formed from Fe-catalyzed... 

Recently, class-J₂ operation mode has been proposed in the literature for high-efficiency power amplifier (PA) design. It has been shown that the output power (Pout) of a class-J₂ PA can be 1.5 dB higher than Pout of a class-J counterpart, whereas the theoretical drain efficiency of the class-J₂ mode can be as high as 83%. This paper is devoted to introduce and characterize the class-J₂₃ mode of operation, which is the generalized form of the class-J₂ mode and provides a new design space to realize highly efficient PSs. In this new PA mode, the third-harmonic voltage is also included in the drain voltage of the transistor to increase the drain efficiency up to 95.4% in theory. Design space... 

Recently, class-J₂ operation mode has been proposed in the literature for high-efficiency power amplifier (PA) design. It has been shown that the output power (Pout) of a class-J₂ PA can be 1.5 dB higher than Pout of a class-J counterpart, whereas the theoretical drain efficiency of the class-J₂ mode can be as high as 83%. This paper is devoted to introduce and characterize the class-J₂₃ mode of operation, which is the generalized form of the class-J₂ mode and provides a new design space to realize highly efficient PSs. In this new PA mode, the third-harmonic voltage is also included in the drain voltage of the transistor to increase the drain efficiency up to 95.4% in theory. Design space... 

In this paper, the performance of the class-J mode power amplifier (PA) is studied when an auxiliary network performs active load modulation on the main transistor. Load modulation is realized by injecting an additional class-C like current with conduction angle of $alpha $ to the drain node of the main transistor. The injected current employs a phase shift of $phi $ with respect to the half-sinusoidal current of the main transistor, and its maximum value is tuned with the size of the transistor used in the auxiliary network. Detailed theoretical formulations are presented for the optimal load impedances of the PA at the fundamental and second-harmonic frequencies. Furthermore, the output... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to... 

Electrochemical sensing performance of two-dimensional hexagonal boron nitride (2D h-BN) has traditionally been suppressed by their intrinsic electrical insulation and deficient electron transportation mechanism. However, the excellent electrocatalytic activity, high specific surface area, N- and B-active edges, structural defects, adjustable band gap through interaction with other nanomaterials, and chemical functionalization, makes 2D h-BN ideal for many sensing applications. Therefore, finding a pathway to modulate the electronic properties of 2D h-BN while the intrinsic characteristics are well preserved, will evolve a new generation of highly sensitive and selective electrochemical... 

Promising properties of boron nitride nanomaterials such as their chemical, thermal, and mechanical stability have made them suitable materials in a various range of applications. However, their low electrical conductivity and wide bandgap, particularly in the case of boron nitride quantum dots (BNQDs), have given rise to severe limitations. Efforts on bandgap engineering through doping and surface functionalization have gained little success due to their high thermodynamic stability and inertness. Herein, we present a novel approach to functionalize BNQDs by hydroxyl, methyl, and amine functional groups aiming to adjust the electronic structure. The successful exfoliation is demonstrated by... 

Using solid-state power amplifiers for next generation of weather radars becomes feasible by pulse compression techniques. In this study a 1.5 kW solid-state power amplifier (transmitter) for C-band weather radars is designed and fabricated by GaN high electron mobility transistor (HEMT) technology. An experimental setup based on heterodyne receiver with 16-bit digitiser is developed to investigate the behavior of the power amplifier under different cooling methods and back-off points. Several measurements with shaped LFM pulse show an approximately identical pulse to pulse (P2P) stability for 3 dB compression, P1dB and 2 dB back-off points while the best sidelobe level (SLL) is achieved for... 

This paper proposes a new variable frequency zero voltage switching (ZVS) control method for boost converter operating in boundary conduction mode (BCM). The intended method keeps the converter in BCM despide of the load and input voltage variations. This is done by changing switching frequency in a certain specified range. The proposed method can guarantee circuit performance in BCM via zero-crossing detection of the inductor current and changing the switching frequency. In addition, with a slight modification in control structure, it is possible to achieve a fully ZVS in all cases. This converter control is carried out in analog form without using microprocessors which, compared with the... 

A Zn-Rich (GaN)1−x(ZnO)xnanostructure was synthesized with the assistance of a high-gravity technique in order to reduce the reaction time and temperature. The synthesized inorganic nanomaterial has been applied in both drug and gene delivery systems, and as the first fully inorganic nanomaterial, it was investigated in a comprehensive cellular investigation as well. In order to increase the potential bioavailability, as well as the interactions with the pCRISPR, the nanomaterial was enriched with additional Zn ions. The nanomaterial and the final nanocarrier were characterized at each step before and after any biological analysisviaFESEM, AFM, TEM, FTIR and XRD. The polymer coated... 

Compton imaging is an imaging technique in which Compton scattering is used to produce images from a gamma-ray source. Compton imaging systems are also known as Compton camera. The basic design of Compton imaging systems consists of two-position detectors that are sensitive to the position and energy scattered from gamma rays. Compton camera efficiency is defined as the fraction of photons entering the scatterer (disperse) detector that undergoes only one Compton scattering and is then photoelectrically absorbed in the absorber detector. In the present study, the efficiency of a Compton camera was investigated based on semiconductor detectors using the GEANT4 simulation toolkit. In this... 

The development of polymer-based composites with thermal transport capability has now become essential in response to the efficient thermal management required in electronic and energy conversion devices. In this work, a novel hybrid filler consisting of graphene nanoplatelet (GNP) and boron nitride microparticles (micro-BN) is used to improve the thermal conductivity of epoxy composite. The GNPs with an average lateral size of 8 µm and an average thickness of 5 nm are in the same volume range with the 1 µm size micro-BN particles. According to the results, the thermal conductivity of the composites changes abruptly with increasing micro-BN loading at fixed GNP loading, which is attributed...