Sharif Digital Repository

Recent investigations on multifunctional piezoelectric semiconductors have shown their excellent potential as photovoltaic components in high-efficiency third-generation quantum nanostructure (QNS) solar cells. The current work is devoted to studying the electro-elastic behavior of high-density QNS photovoltaic semiconductors within which initial mismatch strains of arrays of quantum dots (QDs) or quantum wires (QWRs) induce coupled electro-mechanical fields. The inter-nanostructure couplings which are of great importance in high-density QNS arrays are incorporated in the presented analytical framework. In practice, QNSs with different geometries such as spherical, cuboidal, or pyramidal QDs... 

In this paper, a novel structure is presented in order to decrease the polarization charges of quantum wells. The main purpose of this design is to make electron and hole wavefunctions closer to each other and to increase overlap integral following an increase of radiative recombination rates and internal quantum efficiency. Furthermore, carriers will be increased and become more balanced and identical which leads to an increase in efficiency of light-emitting diodes. The improvement of radiative recombination rates is studied in new structures. Energy bands diagram, carriers density, current density–voltage, and power density–current density are used to demonstrate the superior performance... 

In this paper, a novel structure is presented in order to decrease the polarization charges of quantum wells. The main purpose of this design is to make electron and hole wavefunctions closer to each other and to increase overlap integral following an increase of radiative recombination rates and internal quantum efficiency. Furthermore, carriers will be increased and become more balanced and identical which leads to an increase in efficiency of light-emitting diodes. The improvement of radiative recombination rates is studied in new structures. Energy bands diagram, carriers density, current density–voltage, and power density–current density are used to demonstrate the superior performance... 

The development of polymer-based composites with thermal transport capability has now become essential in response to the efficient thermal management required in electronic and energy conversion devices. In this work, a novel hybrid filler consisting of graphene nanoplatelet (GNP) and boron nitride microparticles (micro-BN) is used to improve the thermal conductivity of epoxy composite. The GNPs with an average lateral size of 8 µm and an average thickness of 5 nm are in the same volume range with the 1 µm size micro-BN particles. According to the results, the thermal conductivity of the composites changes abruptly with increasing micro-BN loading at fixed GNP loading, which is attributed... 

A Zn-Rich (GaN)1−x(ZnO)xnanostructure was synthesized with the assistance of a high-gravity technique in order to reduce the reaction time and temperature. The synthesized inorganic nanomaterial has been applied in both drug and gene delivery systems, and as the first fully inorganic nanomaterial, it was investigated in a comprehensive cellular investigation as well. In order to increase the potential bioavailability, as well as the interactions with the pCRISPR, the nanomaterial was enriched with additional Zn ions. The nanomaterial and the final nanocarrier were characterized at each step before and after any biological analysisviaFESEM, AFM, TEM, FTIR and XRD. The polymer coated... 

This paper proposes a new variable frequency zero voltage switching (ZVS) control method for boost converter operating in boundary conduction mode (BCM). The intended method keeps the converter in BCM despide of the load and input voltage variations. This is done by changing switching frequency in a certain specified range. The proposed method can guarantee circuit performance in BCM via zero-crossing detection of the inductor current and changing the switching frequency. In addition, with a slight modification in control structure, it is possible to achieve a fully ZVS in all cases. This converter control is carried out in analog form without using microprocessors which, compared with the... 

This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi-loop circuits and to design the required stabilization network. Presenting several provisions, the return ratios are extracted by employing immittance or hybrid matrices (Z, Y, G or H) of active two ports. Using these matrices, instead of the S-parameters, facilitates the selection of an appropriate stabilizer network. As a practical case, a non-uniform distributed amplifier (NDA) is designed and inspected for potential instabilities. The presented procedure detects instability associated with one of the NDA circuit's loops, and an appropriate stabilization... 

Low-noise amplifiers (LNAs) with low-noise performance are critical components in communication systems. However, reaching a high level of performance is difficult. This study introduces a LNA for radio frequency front-end receivers with a frequency range of 6–12 GHz. The planned LNA contains a two-stage high-electron-mobility transistor cascade amplifier with a minimum measured noise figure of 0.8 dB and a peak gain of 25 dB at room temperature. The proposed LNA is based on a gallium arsenide field-effect transistor transistor (CE3512K2) because of its good low-noise performance at microwave frequency bands. The measured results demonstrate that the proposed LNA is perfectly matched over... 

Electrochemical sensing performance of two-dimensional hexagonal boron nitride (2D h-BN) has traditionally been suppressed by their intrinsic electrical insulation and deficient electron transportation mechanism. However, the excellent electrocatalytic activity, high specific surface area, N- and B-active edges, structural defects, adjustable band gap through interaction with other nanomaterials, and chemical functionalization, makes 2D h-BN ideal for many sensing applications. Therefore, finding a pathway to modulate the electronic properties of 2D h-BN while the intrinsic characteristics are well preserved, will evolve a new generation of highly sensitive and selective electrochemical... 

Using solid-state power amplifiers for next generation of weather radars becomes feasible by pulse compression techniques. In this study a 1.5 kW solid-state power amplifier (transmitter) for C-band weather radars is designed and fabricated by GaN high electron mobility transistor (HEMT) technology. An experimental setup based on heterodyne receiver with 16-bit digitiser is developed to investigate the behavior of the power amplifier under different cooling methods and back-off points. Several measurements with shaped LFM pulse show an approximately identical pulse to pulse (P2P) stability for 3 dB compression, P1dB and 2 dB back-off points while the best sidelobe level (SLL) is achieved for... 

In this brief, a design technique for tapered distributed low-noise amplifiers (LNAs) is presented. A circuit model is developed for gain and noise analysis of a nonuniform distributed amplifier (DA). It is shown that by optimal tapering of gate and drain transmission lines and transistors, the tapered distributed LNA can provide lower broadband average noise figure (NF) compared to a uniform DA. A proof-of-concept integrated circuit is implemented using a 0.1-μm GaAs pHEMT process. The amplifier provides average gain of 15.2 dB and 3-dB bandwidth of 43.3 GHz. The average NF of 2.3 dB and minimum NF of 2.0 dB are achieved over 2-40 GHz. The chip consumes 55 mA current from a 2-V supply. ©... 

In this paper, two output matching networks (OMNs) are proposed for integrated class-J and class-J-1 mode power amplifiers (PAs). The first MN provides the required load impedances of the class-J mode (i.e., Z(f0) = Ropt + j Ropt and Z(2 f0) = -j (3π/8)Ropt), where as the second MN realizes the optimal impedances of class-J-1 PAs (i.e., Z(f0) = Ropt - j Ropt and Z(2 f0) = j (3π/8)Ropt ). Detailed theoretical analyses are presented for each MN, and the values of matching components (i.e., inductors and capacitors) are obtained in terms of Ropt. Analytical derivations are verified by simulation results, while bandwidth and loss performances of each MN are also characterized. Two... 

Recently, class-J₂ operation mode has been proposed in the literature for high-efficiency power amplifier (PA) design. It has been shown that the output power (Pout) of a class-J₂ PA can be 1.5 dB higher than Pout of a class-J counterpart, whereas the theoretical drain efficiency of the class-J₂ mode can be as high as 83%. This paper is devoted to introduce and characterize the class-J₂₃ mode of operation, which is the generalized form of the class-J₂ mode and provides a new design space to realize highly efficient PSs. In this new PA mode, the third-harmonic voltage is also included in the drain voltage of the transistor to increase the drain efficiency up to 95.4% in theory. Design space... 

Recently, class-J₂ operation mode has been proposed in the literature for high-efficiency power amplifier (PA) design. It has been shown that the output power (Pout) of a class-J₂ PA can be 1.5 dB higher than Pout of a class-J counterpart, whereas the theoretical drain efficiency of the class-J₂ mode can be as high as 83%. This paper is devoted to introduce and characterize the class-J₂₃ mode of operation, which is the generalized form of the class-J₂ mode and provides a new design space to realize highly efficient PSs. In this new PA mode, the third-harmonic voltage is also included in the drain voltage of the transistor to increase the drain efficiency up to 95.4% in theory. Design space... 

In this paper, the performance of the class-J mode power amplifier (PA) is studied when an auxiliary network performs active load modulation on the main transistor. Load modulation is realized by injecting an additional class-C like current with conduction angle of $alpha $ to the drain node of the main transistor. The injected current employs a phase shift of $phi $ with respect to the half-sinusoidal current of the main transistor, and its maximum value is tuned with the size of the transistor used in the auxiliary network. Detailed theoretical formulations are presented for the optimal load impedances of the PA at the fundamental and second-harmonic frequencies. Furthermore, the output... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to... 

The CLLC resonant converter is a promising candidate for high efficient, bidirectional power transfer applications such as vehicle-to-grid (V2G) on-board charger and hybrid vehicle DC-DC converter. Nevertheless, the analysis of CLLC still remains challenging because of its complex multi-resonant nature and several storage elements. In this paper, a circuit analysis method based on change of variables is presented that maps the state space equations into two decoupled sets of equations. The analyses are carried out in two state-plane coordinate systems, then the results are mapped onto the original region. The proposed method is then used to thoroughly analyze the CLLC resonant converter... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

Fundamental constraints imposing power-frequency trade-offs in conventional electronics have stimulated research on alternative technologies for millimeter-wave and sub-millimeter-wave applications. In this work, we use the picosecond threshold firing of nanoplasma switches to demonstrate on-chip millimeter-wave modulators that rely only on a single metal layer. We show amplitude shift keying (ASK) modulation with self-synthesized carrier frequencies up to 66 GHz (limited by the bandwidth of our experimental setup), with output powers up to 30 dBm. These all-metal nanoplasma modulators are low cost, and generally compatible with different platforms, from CMOS and III-V compounds to flexible...