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    Thermal- and Process-Variation-Aware Data Center Energy Reduction

    , M.Sc. Thesis Sharif University of Technology Pahlavan, Ali (Author) ; Goudarzi, Maziar (Supervisor)
    Abstract
    Size and number of high-performance data centers are fast growing all over the world in recent years. The growth in the leakage power consumption of servers along with its exponential dependency on the ever increasing process variation in nanometer technologies have made it inevitable to move toward variation-aware power reduction strategies. In this thesis, we simultaneously apply thermal- and variation-aware server placement and chassis consolidation methods to reduce total power consumption of data centers. We introduce two server placement heuristics as well as an Integer Linear Programming (ILP)-based server placement method based on power consumption of each server and the data center... 

    Design and Analysis of Low-Power VLSI Clock Distribution Networks, Considering Process Variations

    , M.Sc. Thesis Sharif University of Technology Novin, Mohammad (Author) ; Sarvari, Reza (Supervisor)
    Abstract
    The Technology scaling and reduction of the size of transistors has led to an increase in the switching speed and, as a result, to an increase in the clock frequency.But in recent years, the continuation of this process of increasing the clock frequency has been almost stopped considering the considerations of power consumption. Previous research has shown that approximately 30-50% of the dynamic power consumed by the microprocessor is wasted in the clock distribution network.Therefore, the design of clock distribution networks is a big challenge for future microprocessors due to the trend of Technology scaling and process variation. In this thesis, we used the emerging technology of... 

    Investigation of the Effects of Aging and Process Variation on Reliability in SRAM Based Memory Circuits

    , M.Sc. Thesis Sharif University of Technology Nazari, Reza (Author) ; Miremadi, Ghassem (Supervisor)
    Abstract
    Negative Bias Temperature Instability (NBTI) in CMOS devices is known as the major source of aging effect leading to performance and reliability degradation in modern processors. Instruction-cache (I-cache), which has a decisive role in performance and reliability of the processor, is one of the most affected modules by NBTI. Variations in duty Cycles and long-time residency of data blocks in I-cache lines (stress condition) are the two major causes of NBTI acceleration. This paper proposes a novel I-cache management technique to minimize the aging effect in the I-cache SRAM cells. The proposed technique consists of a smart controller that monitors the cache lines behavior and distributes... 

    Process Variation-Aware Task Scheduling for MPSoCs

    , Ph.D. Dissertation Sharif University of Technology Momtazpour, Mahmoud (Author) ; Sanaei, Esmaeil (Supervisor) ; Goudarzi, Maziar (Co-Advisor)
    Abstract
    Advances in semiconductor manufacturing technologies have enabled us to build billions of transistors on a single die. However, the increasing amount of process variation in nanometer technologies has made it inevitable to move toward statistical analysis methods, instead of deterministic worst-case-based techniques, at all design levels. In this project, we studied the problem of variation-aware task scheduling for MPSoCs. To this end, we first proposed a variability analysis framework to analyze the effect of process variation on the main parameters of MPSoCs. Then, to solve the MPSoC task scheduling problem, we proposed two metaheuristic variation-aware task scheduling method based on... 

    Design of an X-Band Quadrature Voltage-Controlled Oscillator (QVCO) in 0.18µm CMOS Technology

    , M.Sc. Thesis Sharif University of Technology Lohrabi Pour, Fariborz (Author) ; Medi, Ali (Supervisor)
    Abstract
    Voltage Controlled Oscillator (VCO) is one of the essential blocks in communication transceivers. The important specifications of the VCOs like Phase Noise, always is a motivation for researchers in order to introduce novel approaches to conquer these challenges. By development of technology and appearance of new fabrication technologies, this issue take more attention that the past. Also the out of control parameters like process variation and temperature, affect that. So, according to the challenges ahead and the demand of transceiver systems for low phase noise and reasonable power consumption, solutions for overcome these challenges. Finally, a class-C VCO with the tuning range of 4.25-5... 

    Statistical MPSoC Architecture Optimization under Process Variation

    , M.Sc. Thesis Sharif University of Technology Ghorbani, Mahboobeh (Author) ; Goudarzi, Maziar (Supervisor)
    Abstract
    In nanometer technologies, the effect of process variation is observed in Multi-Processor System on Chip (MPSoC) in terms of variation in processors‟ frequency and leakage power. Traditionally, only worst case values of the system parameters were concerned and a worst-case optimization algorithm was employed for an application under design. As previous researches have shown these algorithms are not optimal in terms of parametric yield compared with newly employed statistical optimization algorithms. In this project, we have considered the problem of simultaneously selecting MPSoC architecture (which includes type and number of processors and the communication media) and task and... 

    Design of a Low Power and Robust SRAM Cell Based on FinFET

    , M.Sc. Thesis Sharif University of Technology Sayyah Ensan, Sina (Author) ; Hesabi, Shahin (Supervisor) ; Moaiyeri, Mohammad Hossein (Supervisor)
    Abstract
    By scaling the technology node, leakage power and process variations emerge as the two important factors to design a chip. Static power becomes more important when the number of portable devices which spend most of the time in the idle mode is increasing.Process variations lessen performance, reliability and lead to more leakage power. To mitigate these limitations multiple devices have been proposed to displace Bulk MOSFET.Among these devices we can name FinFET and CNTFET transistors. FinFET transistors due to their superior gate control in compare to Bulk MOSFETs transistor have shown lesser short channel effects, more scalability, more I_on to I_off ratio and lesser process variations.... 

    Design and Analysis of Low Voltage Low-power SRAM

    , Ph.D. Dissertation Sharif University of Technology Saeidi, Roghayeh (Author) ; Hajsadeghi , Khosro (Supervisor) ; Sharifkhani, Mohammad (Supervisor)
    Abstract
    The explosive growth of battery operated devices has made low-power design a priority in recent years. Moreover, embedded SRAM units have become an important block in modern SoCs. The increasing number of transistor count in the SRAM units and the surging leakage current of the MOS transistors in the scaled technologies have made the SRAM unit a power hungry block from both dynamic and static perspectives. One of the key strategies for reducing power consumption is reducing the supply voltage to near or below the threshold voltage of the transistor. However, as supply voltage decreases to tackle the power consumption, the data stability of the SRAM cells have become a major concern in recent... 

    Analysis and Design of a High Speed Embedded SRAM

    , M.Sc. Thesis Sharif University of Technology Rasteh, Ali (Author) ; Sharifkhani, Mohammad (Supervisor)
    Abstract
    SRAM has a very wide application in different platforms including Cache Memory in Microcontrollers, etc. also SRAM is the first candidate for memory usage in every application needing High speed or static memory circuits. SRAM Cells are constructed by Minimum size transistors in each technology node and usually the newest technology nodes are used for building SRAM blocks for accommodating maximum number of SRAM Cells in a specific area. Going through smaller technology nodes, Leakage current and Process variations problem, creates serious difficulties in designing Low Power or High speed SRAM Memories and many academic and industrial works are done wishing for improvement in SRAM power... 

    Circuit Level Techniques for Soft Error Mitigation in Combinational and Sequential Parts in Nano-scale CMOS Technology

    , Ph.D. Dissertation Sharif University of Technology Rajaei, Ramin (Author) ; Tabandeh, Mahmoud (Supervisor) ; Fazeli, Mahdi (Co-Advisor)
    Abstract
    CMOS technology has reached two digit nanometer dimensions. This scaling trend improves performance and power consumption on the one hand, and reduces noise margin and circuits reliability on the other. Along with downscaling, sensitivity to radiation induced soft errors is increasing. As CMOS dimensions are shrinking, node capacitance of circuits become smaller. Consequently, particles with smaller charge could induce parasitic voltages in some nodes and result in soft errors. There are more particles with smaller charge than the ones with larger. Therefore, soft error rate is rapidly increasing with technology advances. Single Event Multiple Effects (SEMEs) is a new challenge emerged in... 

    Efficient Power Management of 3D-stacked DRAMs Through Aggressive Undervolting

    , M.Sc. Thesis Sharif University of Technology Baneshi, Saeideh (Author) ; Sarbazi Azad, Hamid (Supervisor)
    Abstract
    Nowadays the performance of multi-core systems is increasing; however, the limited off-chip bandwidth of DRAMs is the biggest limiting factor for keeping up this trend. 3D stacked memories are good alternatives for current memories as they utilize high-bandwidth low-power through silicon via (TSV) connections. The main problem of these structures is significant rise of temperature as heat cannot be dissipated easily from the middle layers. As a result, utilizing thermal and power-aware management techniques is one of the most critical design goals of these systems. DRAM manufacturers consider timing parameters of memory controller conservatively high to guarantee the true functionality of... 

    Process-Variation-Aware Configuration Selection of Configurable MPSOC for Power-Yield Maximization

    , M.Sc. Thesis Sharif University of Technology Izadyar, Hamideh (Author) ; Goudarzi, Maziar (Supervisor)
    Abstract
    Process Variation is seen as statistical variations in leakage current and delay of transistors in nano-scale technologies. The amount of process variations increase as the size of transistors decrease by technology scaling such that those effects can be seen in frequency of MPSoC (Multi-Processor System-on-Chip) cores and their leakage power deviation. These variations cause the tasks duration and power consumption fluctuate in different processors in an MPSoC instance. Consequently, some chip instances of the same MPSoC may consume more time and power than their considered limitations. Hence considering the process variation is necessary and required for MPSoC optimization at different... 

    Statistical Analysis of Parameter Fluctuation on Performance of Giga Scale Integration

    , M.Sc. Thesis Sharif University of Technology Asghari Shirvani, Rouzbeh (Author) ; Sarvari, Reza (Supervisor)
    Abstract
    Developing to the sub-micron dimentions reduces the size of integrated circuits, so interconnects and a variations in their characteristics has more effects on circuit performance. Worst case study is the most common method in these systems, but in many cases interconnect lines are independent from eachother. Analysis state that worst case is out of the distribution in many cases (with zero possibility) and result in a pessimistic design. Statistical analysis should replace worst case analysis in multi varient systems. In this titile, statistical analysis will be used to investigate performance of interconnects in new technology. Maximum variation in interconnect parameters are considered... 

    A robust and low-power near-threshold SRAM in 10-nm FinFET technology

    , Article Analog Integrated Circuits and Signal Processing ; Volume 94, Issue 3 , 2018 , Pages 497-506 ; 09251030 (ISSN) Sayyah Ensan, S ; Moaiyeri, M. H ; Hessabi, S ; Sharif University of Technology
    Springer New York LLC  2018
    Abstract
    This paper presents a robust and low-power single-ended robust 11T near-threshold SRAM cell in 10-nm FinFET technology. The proposed cell eliminates write disturbance and enhances write performance by disconnecting the path between cross-coupled inverters during the write operation. FinFETs suffer from width quantization, and SRAM performance is highly dependent to transistors sizing. The proposed structure with minimum sized tri-gate FinFETs operates without failure under major process variations. In addition, read disturbance is reduced by isolating the storage nodes during the read operations. To reduce power consumption this cell uses only one bit-line for both read and write operations.... 

    Communication at the Speed of Light (CaSoL): A New Paradigm for Designing Global Wires

    , Article IEEE Transactions on Electron Devices ; Volume 66, Issue 8 , 2019 , Pages 3466-3472 ; 00189383 (ISSN) Sarvari, R ; Rassekh, A ; Shahhosseini, S ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2019
    Abstract
    In this paper, we argue that communication at the speed of light (CaSoL) through on-chip copper interconnects is possible in the near future based on giga-scale integration (GSI) technologies. A three-step algorithm is introduced to design the optimum buffers in such systems. HSPICE simulations show that a 1.3× time of flight (TF) is reachable in 7-nm FinFET technology. It is also shown that such a design is by nature, robust, and immune to process variations and crosstalk noise. © 1963-2012 IEEE  

    DsReliM: Power-constrained reliability management in Dark-Silicon many-core chips under process variations

    , Article International Conference on Hardware/Software Codesign and System Synthesis, CODES+ISSS 2015, 4 October 2015 through 9 October 2015 ; Oct , 2015 , Pages 75-82 ; 9781467383219 (ISBN) Salehi, M ; Shafique, M ; Kriebel, F ; Rehman, S ; Tavana, M. K ; Ejlali, A ; Henkel, J ; ACM; IEEE ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2015
    Abstract
    Due to the tight power envelope, in the future technology nodes it is envisaged that not all cores in a many-core chip can be simultaneously powered-on (at full performance level). The power-gated cores are referred to as Dark Silicon. At the same time, growing reliability issues due to process variations and soft errors challenge the cost-effective deployment of future technology nodes. This paper presents a reliability management system for Dark Silicon chips (dsReliM) that optimizes for reliability of on-chip systems while jointly accounting for soft errors, process variations and the thermal design power (TDP) constraint. Towards the TDP-constrained reliability optimization, dsReliM... 

    Run-time adaptive power-aware reliability management for many-cores

    , Article IEEE Design and Test ; 2017 ; 21682356 (ISSN) Salehi, M ; Ejlali, A ; Shafique, M ; Sharif University of Technology
    Abstract
    Escalating reliability threats and performance issues due to process variations under the tight power envelopes of multi- /many-core chips challenge the cost-effective deployment of future technology nodes. We propose an adaptive run-time system that synergistically integrates heterogeneous hardening modes at both hardware and software levels, and selects appropriate hardening modes for concurrently executing applications under total chip power budget and timing constraints, while optimizing for reliability. To enable a high level of adaptability, we perform a comprehensive analysis of various design tradeoffs and study the impact of hardware/software hardening modes in terms of achieved... 

    Run-Time adaptive power-aware reliability management for manycores

    , Article IEEE Design and Test ; Volume 35, Issue 5 , 2018 , Pages 36-44 ; 21682356 (ISSN) Salehi, M ; Ejlali, A ; Shafique, M ; Sharif University of Technology
    IEEE Computer Society  2018
    Abstract
    Editor's note: Due to increasing process, voltage, and temperature (PVT) variability, reliability is becoming a growing worry. This article addresses this concern with a combination of software and hardware hardening modes while considering power, performance, and overhead constraints. Similar to other examples in this special issue, this work illustrates that complex management tasks that have to integrate multiple objectives, goals, and constraints require a comprehensive understanding of the system's state. - Axel Jantsch, TU Wien - Nikil Dutt, University of California at Irvine. © 2013 IEEE  

    PIPF-DRAM: Processing in precharge-free DRAM

    , Article 59th ACM/IEEE Design Automation Conference, DAC 2022, 10 July 2022 through 14 July 2022 ; 2022 , Pages 1075-1080 ; 0738100X (ISSN); 9781450391429 (ISBN) Rohbani, N ; Soleimani, M. A ; Sarbazi Azad, H ; ACM Special Interest Group on Design Automation (SIGDA); IEEE CEDA ; Sharif University of Technology
    Institute of Electrical and Electronics Engineers Inc  2022
    Abstract
    To alleviate costly data communication among processing cores and memory modules, parallel processing-in-memory (PIM) is a promising approach which exploits the huge available internal memory bandwidth. High capacity, wide row size, and maturity of DRAM technology, make DRAM an alluring structure for PIM. However, dense layout, high process variation, and noise vulnerability of DRAMs make it very challenging to apply PIM for DRAMs in practice. This work proposes a PIM structure which eliminates these DRAM limitations, exploiting a precharge-free DRAM (PF-DRAM) structure. The proposed PIM structure, called PIPF-DRAM, performs parallel bitwise operations only by modifying control signal... 

    Low cost soft error hardened latch designs for nano-scale CMOS technology in presence of process variation

    , Article Microelectronics Reliability ; Volume 53, Issue 6 , June , 2013 , Pages 912-924 ; 00262714 (ISSN) Rajaei, R ; Tabandeh, M ; Fazeli, M ; Sharif University of Technology
    2013
    Abstract
    In this paper, two Low cost and Soft Error Hardened latches (referred to as LSEH1 and LSEH2) are proposed and evaluated. The proposed latches are fully SEU immune, i.e. they are capable of tolerating all particle strikes to any of their nodes. Moreover, they can mask Single Event Transients (SETs) occurring in combinational logics and reaching the input of the latches. We have compared our SEU/SET-tolerant latches with some well-known previously proposed soft error tolerant latches. To evaluate the proposed latches, we have done a set of SPICE simulations. The simulation results trough comparisons with other hardened latches reveal that the proposed latches not only have more robustness but...